1 results match your criteria: "Higher Technical School of Industrial Design and Engineering[Affiliation]"

IGBT Overcurrent Capabilities in Resonant Circuits.

Sensors (Basel)

November 2024

Higher Technical School of Industrial Design and Engineering, Universidad Politécnica de Madrid, C/Ronda de Valencia, 28012 Madrid, Spain.

The control of IGBT (insulated gate bipolar transistor) and MOSFET (metal oxide semiconductor field effect transistor) is of great interest nowadays as they are widely used in electric vehicles, photovoltaic applications, and a multitude of systems. The field of power electronics and their correct activation ensures that the transistors are operated without being destroyed. In this work, a double resonant transformer was built and used to produce very high currents.

View Article and Find Full Text PDF