A simple route to synchronized nucleation of self-catalyzed GaAs nanowires on silicon for sub-Poissonian length distributions.

We demonstrate a simple route to grow ensembles of self-catalyzed GaAs nanowires with a remarkably narrow statistical distribution of lengths on natively oxidized Si(111) substrates. The fitting of the nanowire length distribution (LD) with a theoretical model reveals that the key requirements for narrow LDs are the synchronized nucleation of all nanowires on the substrate and the absence of beam shadowing from adjacent nanowires. Both requirements are fulfilled by controlling the size and number density of the openings in SiO , where the nanowires nucleate.

Functional thiols as repair and doping agents of defective MoS monolayers.

Recent experimental and theoretical studies indicate that thiols (R-SH) can be used to repair sulfur vacancy defects in MoS monolayers (MLs). This density functional theory study investigates how the thiol repair mechanism process can be used to dope MoS MLs. Fluorinated thiols as well as amine-containing ones are used to p- and n-dope the MoS ML, respectively.

Polymer-based doping control for performance enhancement of wet-processed short-channel CNTFETs.

The electrical transport properties of short-channel transistors based on single-walled carbon nanotubes (CNT) are significantly affected by bundling along with solution processing. We report that especially high off currents of CNT transistors are not only related to the incorporation of metallic CNTs but also to the incorporation of CNT bundles. By applying device passivation with poly(4-vinylpyridine), the impact of CNT bundling on the device performance can be strongly reduced due to increased gate efficiency as well as reduced oxygen and water-induced p-type doping, boosting essential field-effect transistor performance parameters by several orders of magnitude.