Formation of Si nanowires by the electrochemical reduction of SiO2 with Ni or NiO additives.

Various morphologies of silicon nanowires (SiNWs) were successfully prepared by the electrochemical reduction of silica mixed with different additives (Au, Ag, Fe, Co, Ni, and NiO, respectively). Straight SiNWs were extensively obtained by the electro-reduction of porous Ni/SiO2 blocks in molten CaCl2 at 900 °C. The SiNWs had a wide diameter distribution of 80 to 350 nm, and the Ni-Si droplets were found on the tips of the nanowires.

Electrochemical preparation of silicon nanowires from nanometre silica in molten calcium chloride.

Here we report Si nanowire growth by electrochemical reduction of nanometre silica in molten CaCl2; to our knowledge, this is the first report of an electrochemical route that provides crystalline Si nanowires in large quantities.