Abundant topological phases in hydrogenated group-IV binary alloy compounds.

Based on the widely studied two-dimensional layered materials, new materials with unique properties can be acquired by stacking the layered materials with different styles. By using density-functional calculations and symmetry analysis, we here present a route to produce abundant topologically nontrivial electronic states in three-dimensional compounds made of stacked monolayer hydrogenated group-IV binary alloys. Triply degenerate point (TDP) semimetals and Dirac semimetals are found in the hydrogenated SnPb compounds with different stacking configurations.