Optoelectronic synapses based on a triple cation perovskite and Al/MoO interface for neuromorphic information processing.

Optoelectronic synaptic transistors are attractive for applications in next-generation brain-like computation systems, especially for their visible-light operation and in-sensor computing capabilities. However, from a material perspective, it is difficult to build a device that meets expectations in terms of both its functions and power consumption, prompting the call for greater innovation in materials and device construction. In this study, we innovatively combined a novel perovskite carrier supply layer with an Al/MoO interface carrier regulatory layer to fabricate optoelectronic synaptic devices, namely Al/MoO/CsFAMA/ITO transistors.