Imaging and strain analysis of nano-scale SiGe structures by tip-enhanced Raman spectroscopy.

The spatial resolution and high sensitivity of tip-enhanced Raman spectroscopy allows the characterization of surface features on a nano-scale. This technique is used to visualize silicon-based structures, which are similar in width to the transistor channels in present leading-edge CMOS devices. The reduction of the intensive far-field background signal is crucial for detecting the weak near-field contributions and requires beside a careful alignment of laser polarization and tip axis also the consideration of the crystalline sample orientation.

A study of phase separated Ni66Nb17Y17 metallic glass using atom probe tomography.

Microstructural characterization of Ni(66)Nb(17)Y(17) as spun metallic glass ribbon was carried out using atom probe tomography. A comparison of different experimental conditions for pulsed laser and pulsed voltage field evaporation reveal that the laser pulsing can be optimized to avoid preferential evaporation of yttrium. Atom probe tomography measurements illustrate that the sample undergoes phase separation resulting in two interconnected phases during the process of vitrification.