1 results match your criteria: "Electronic Material Research Institute of Tianjin[Affiliation]"
Synthesis of Vertically Standing MoS2 Triangles on SiC.
Sci Rep
August 2016
Electronic Material Research Institute of Tianjin, Tianjin 300220, P. R. China.
Layered material MoS2 has been attracting much attention due to its excellent electronical properties and catalytic property. Here we report the synthesis of vertically standing MoS2 triangles on silicon carbon(SiC), through a rapid sulfidation process. Such edge-terminated films are metastable structures of MoS2, which may find applications in FinFETs and catalytic reactions.
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