Measuring Mechanism and Applications of Polymer-Based Flexible Sensors.

A new type of flexible sensor, which could maintain the deformation consistency and achieve the real-time detection of the variation in load of the measured object, was proposed in this work. According to the principle of forced assembly, PDMS was used as the substrate of sensitive components and electrodes, while carbon fiber was added as a conductive medium to prepare a polymer-based flexible sensor, which effectively overcame the deformation limitation and output instability of conventional flexible sensors due to different substrates of sensitive components and the electrode. Combined with the sensor structure and the forced assembly method, a theoretical analysis of its conductive measurement mechanism was carried out.

Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures.

Long-lived interlayer excitons in van der Waals heterostructures based on transition metal dichalcogenides, together with unique spin-valley physics, make them promising for next-generation photonic and valleytronic devices. While the emission characteristics of interlayer excitons have been studied, efficient manipulation of their valley-state, a necessary requirement for information encoding, is still lacking. Here, we demonstrate comprehensive electrical control of interlayer excitons in a MoSe/WSe heterostructure.

Thyroid Cancer Benefits the Prognosis of Ovarian Cancer: A SEER-Based Study.

Introduction: To explore the effect of a second thyroid cancer (TC) on ovarian cancer (OC) patient survival, we compared OC patients with or without a second primary TC using data from the Surveillance, Epidemiology, and End Results (SEER) database.

Methods: Data for OC only, female TC only and OC patients with a second TC (OC2TC) from two periods, 2000-2014 and 1980-1994, were extracted from the SEER database. Differences in clinicopathological and treatment characteristics were analysed using the chi-square test.

Effect of Particles Size on Dielectric Properties of Nano-ZnO/LDPE Composites.

The melt blending was used to prepare 3 wt% ZnO/low density polyethylene (ZnO/LDPE) nanocomposites in this article. The effect of different inorganic ZnO particles doping on the dielectrical property and crystal habit of LDPE matrix was explored. The nanoparticles size was 9 nm, 30 nm, 100 nm, and 200 nm respectively.

Thermo-Mechanical Properties of Glass Fiber Reinforced Shape Memory Polyurethane for Orthodontic Application.

Objectives: Glass fiber reinforced shape memory polyurethane (GFRSMPU) has great potential to be an alternative kind of material for orthodontic archwires for overcoming the disadvantages of metal wires in terms of esthetic and allergy and deficiency of pure shape memory polyurethane (SMPU) wires in mechanical properties. The objective of this study was to investigate the thermo-mechanical properties and shape recovery functions of GFRSMPU and evaluate the feasibility of using this composite for orthodontic archwires.

Material And Methods: GFRSMPU were made from short cut glass fibers and SMPU by mixing extrusion.

Room-temperature electrical control of exciton flux in a van der Waals heterostructure.

Devices that rely on the manipulation of excitons-bound pairs of electrons and holes-hold great promise for realizing efficient interconnects between optical data transmission and electrical processing systems. Although exciton-based transistor actions have been demonstrated successfully in bulk semiconductor-based coupled quantum wells, the low temperature required for their operation limits their practical application. The recent emergence of two-dimensional semiconductors with large exciton binding energies may lead to excitonic devices and circuits that operate at room temperature.

Intervalley Scattering of Interlayer Excitons in a MoS/MoSe/MoS Heterostructure in High Magnetic Field.

Degenerate extrema in the energy dispersion of charge carriers in solids, also referred to as valleys, can be regarded as a binary quantum degree of freedom, which can potentially be used to implement valleytronic concepts in van der Waals heterostructures based on transition metal dichalcogenides. Using magneto-photoluminescence spectroscopy, we achieve a deeper insight into the valley polarization and depolarization mechanisms of interlayer excitons formed across a MoS/MoSe/MoS heterostructure. We account for the nontrivial behavior of the valley polarization as a function of the magnetic field by considering the interplay between exchange interaction and phonon-mediated intervalley scattering in a system consisting of Zeeman-split energy levels.

Reconfigurable Diodes Based on Vertical WSe Transistors with van der Waals Bonded Contacts.

New device concepts can increase the functionality of scaled electronic devices, with reconfigurable diodes allowing the design of more compact logic gates being one of the examples. In recent years, there has been significant interest in creating reconfigurable diodes based on ultrathin transition metal dichalcogenide crystals due to their unique combination of gate-tunable charge carriers, high mobility, and sizeable band gap. Thanks to their large surface areas, these devices are constructed under planar geometry and the device characteristics are controlled by electrostatic gating through rather complex two independent local gates or ionic-liquid gating.

Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide.

The possibility of tailoring physical properties by changing the number of layers in van der Waals crystals is one of the driving forces behind the emergence of two-dimensional materials. One example is bulk MoS, which changes from an indirect gap semiconductor to a direct bandgap semiconductor in the monolayer form. Here, we show a much bigger tuning range with a complete switching from a metal to a semiconductor in atomically thin PtSe as its thickness is reduced.

Resolving the spin splitting in the conduction band of monolayer MoS.

Time-reversal symmetry and broken spin degeneracy enable the exploration of spin and valley quantum degrees of freedom in monolayer transition-metal dichalcogenides. While the strength of the large spin splitting in the valance band of these materials is now well-known, probing the 10-100 times smaller splitting in the conduction band poses significant challenges. Since it is easier to achieve n-type conduction in most of them, resolving the energy levels in the conduction band is crucial for the prospect of developing new spintronic and valleytronic devices.

Optospintronics in Graphene via Proximity Coupling.

The observation of micrometer size spin relaxation makes graphene a promising material for applications in spintronics requiring long-distance spin communication. However, spin dependent scatterings at the contact/graphene interfaces affect the spin injection efficiencies and hence prevent the material from achieving its full potential. While this major issue could be eliminated by nondestructive direct optical spin injection schemes, graphene's intrinsically low spin-orbit coupling strength and optical absorption place an obstacle in their realization.

Probing the Interlayer Exciton Physics in a MoS/MoSe/MoS van der Waals Heterostructure.

Stacking atomic monolayers of semiconducting transition metal dichalcogenides (TMDs) has emerged as an effective way to engineer their properties. In principle, the staggered band alignment of TMD heterostructures should result in the formation of interlayer excitons with long lifetimes and robust valley polarization. However, these features have been observed simultaneously only in MoSe/WSe heterostructures.

van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices.

Because of the chemical inertness of two dimensional (2D) hexagonal-boron nitride (h-BN), few atomic-layer h-BN is often used to encapsulate air-sensitive 2D crystals such as black phosphorus (BP). However, the effects of h-BN on Schottky barrier height, doping, and contact resistance are not well-known. Here, we investigate these effects by fabricating h-BN encapsulated BP transistors with cobalt (Co) contacts.

Suppressing Nucleation in Metal-Organic Chemical Vapor Deposition of MoS Monolayers by Alkali Metal Halides.

Toward the large-area deposition of MoS layers, we employ metal-organic precursors of Mo and S for a facile and reproducible van der Waals epitaxy on c-plane sapphire. Exposing c-sapphire substrates to alkali metal halide salts such as KI or NaCl together with the Mo precursor prior to the start of the growth process results in increasing the lateral dimensions of single crystalline domains by more than 2 orders of magnitude. The MoS grown this way exhibits high crystallinity and optoelectronic quality comparable to single-crystal MoS produced by conventional chemical vapor deposition methods.

Defect Healing and Charge Transfer-Mediated Valley Polarization in MoS/MoSe/MoS Trilayer van der Waals Heterostructures.

Monolayer transition metal dichalcogenides (TMDCs) grown by chemical vapor deposition (CVD) are plagued by a significantly lower optical quality compared to exfoliated TMDCs. In this work, we show that the optical quality of CVD-grown MoSe is completely recovered if the material is sandwiched in MoS/MoSe/MoS trilayer van der Waals heterostructures. We show by means of density functional theory that this remarkable and unexpected result is due to defect healing: S atoms of the more reactive MoS layers are donated to heal Se vacancy defects in the middle MoSe layer.

Highly Oriented Atomically Thin Ambipolar MoSe Grown by Molecular Beam Epitaxy.

Transition metal dichalcogenides (TMDCs), together with other two-dimensional (2D) materials, have attracted great interest due to the unique optical and electrical properties of atomically thin layers. In order to fulfill their potential, developing large-area growth and understanding the properties of TMDCs have become crucial. Here, we have used molecular beam epitaxy (MBE) to grow atomically thin MoSe on GaAs(111)B.

OR.NET: multi-perspective qualitative evaluation of an integrated operating room based on IEEE 11073 SDC.

Purpose: Clinical working environments have become very complex imposing many different tasks in diagnosis, medical treatment, and care procedures. During the German flagship project OR.NET, more than 50 partners developed technologies for an open integration of medical devices and IT systems in the operating room.

High Responsivity, Large-Area Graphene/MoS2 Flexible Photodetectors.

We present flexible photodetectors (PDs) for visible wavelengths fabricated by stacking centimeter-scale chemical vapor deposited (CVD) single layer graphene (SLG) and single layer CVD MoS2, both wet transferred onto a flexible polyethylene terephthalate substrate. The operation mechanism relies on injection of photoexcited electrons from MoS2 to the SLG channel. The external responsivity is 45.

A robust molecular probe for Ångstrom-scale analytics in liquids.

Traditionally, nanomaterial profiling using a single-molecule-terminated scanning probe is performed at the vacuum-solid interface often at a few Kelvin, but is not a notion immediately associated with liquid-solid interface at room temperature. Here, using a scanning tunnelling probe functionalized with a single C60 molecule stabilized in a high-density liquid, we resolve low-dimensional surface defects, atomic interfaces and capture Ångstrom-level bond-length variations in single-layer graphene and MoS2. Atom-by-atom controllable imaging contrast is demonstrated at room temperature and the electronic structure of the C60-metal probe complex within the encompassing liquid molecules is clarified using density functional theory.

Disorder engineering and conductivity dome in ReS2 with electrolyte gating.

Atomically thin rhenium disulphide (ReS2) is a member of the transition metal dichalcogenide family of materials. This two-dimensional semiconductor is characterized by weak interlayer coupling and a distorted 1T structure, which leads to anisotropy in electrical and optical properties. Here we report on the electrical transport study of mono- and multilayer ReS2 with polymer electrolyte gating.

Evolution of the Valley Position in Bulk Transition-Metal Chalcogenides and Their Monolayer Limit.

Layered transition metal chalcogenides with large spin orbit coupling have recently sparked much interest due to their potential applications for electronic, optoelectronic, spintronics, and valleytronics. However, most current understanding of the electronic structure near band valleys in momentum space is based on either theoretical investigations or optical measurements, leaving the detailed band structure elusive. For example, the exact position of the conduction band valley of bulk MoS2 remains controversial.

Electrical contacts to two-dimensional semiconductors.

The performance of electronic and optoelectronic devices based on two-dimensional layered crystals, including graphene, semiconductors of the transition metal dichalcogenide family such as molybdenum disulphide (MoS2) and tungsten diselenide (WSe2), as well as other emerging two-dimensional semiconductors such as atomically thin black phosphorus, is significantly affected by the electrical contacts that connect these materials with external circuitry. Here, we present a comprehensive treatment of the physics of such interfaces at the contact region and discuss recent progress towards realizing optimal contacts for two-dimensional materials. We also discuss the requirements that must be fulfilled to realize efficient spin injection in transition metal dichalcogenides.

Electromechanical oscillations in bilayer graphene.

Nanoelectromechanical systems constitute a class of devices lying at the interface between fundamental research and technological applications. Realizing nanoelectromechanical devices based on novel materials such as graphene allows studying their mechanical and electromechanical characteristics at the nanoscale and addressing fundamental questions such as electron-phonon interaction and bandgap engineering. In this work, we realize electromechanical devices using single and bilayer graphene and probe the interplay between their mechanical and electrical properties.

Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2.

Continuous tuning of material properties is highly desirable for a wide range of applications, with strain engineering being an interesting way of achieving it. The tuning range, however, is limited in conventional bulk materials that can suffer from plasticity and low fracture limit due to the presence of defects and dislocations. Atomically thin membranes such as MoS2 on the other hand exhibit high Young's modulus and fracture strength, which makes them viable candidates for modifying their properties via strain.

Optically active quantum dots in monolayer WSe2.

Semiconductor quantum dots have emerged as promising candidates for the implementation of quantum information processing, because they allow for a quantum interface between stationary spin qubits and propagating single photons. In the meantime, transition-metal dichalcogenide monolayers have moved to the forefront of solid-state research due to their unique band structure featuring a large bandgap with degenerate valleys and non-zero Berry curvature. Here, we report the observation of zero-dimensional anharmonic quantum emitters, which we refer to as quantum dots, in monolayer tungsten diselenide, with an energy that is 20-100 meV lower than that of two-dimensional excitons.