2 results match your criteria: "Duy Tan University Da Nang Vietnam nguyendinhhien2@duytan.edu.vn.[Affiliation]"
Optical, magnetic, and transport properties of two-dimensional III-nitride semiconductors (AlN, GaN, and InN) due to acoustic phonon scattering.
Nanoscale Adv
October 2024
Institute of Research and Development, Duy Tan University Da Nang Vietnam
In this paper, the magneto-optical transport (MOT) properties of III-nitride Pöschl-Teller quantum well (QW) semiconductors, including AlN, GaN, and InN, resulting from the acoustic phonon interaction are thoroughly investigated and compared by applying the technique of operator projection. In particular, a comparison is made between the Pöschl-Teller QW results and the square QW ones. The findings demonstrate that the MOT properties of III-nitride QW semiconductors resulting from acoustic phonon scattering are strongly influenced by the quantum system (QS) temperature, applied magnetic field, and QW width.
View Article and Find Full Text PDFComparison of electron scattering by acoustic-phonons in two types of quantum wells with GaAs and GaN materials.
Nanoscale Adv
January 2024
Institute of Research and Development, Duy Tan University Da Nang Vietnam
Article Synopsis
- This study focuses on comparing the strength of electron-acoustic-phonon (EAP) interactions in symmetrical and asymmetrical quantum wells (QWs) made from GaAs and GaN materials.* -
- The researchers used a method that calculates the strength of these interactions by analyzing the absorption peak associated with cyclotron resonance (CR) and found that this strength is influenced by factors like electron temperature, external magnetic field, and confined potential frequency.* -
- Key findings indicate that EAP interaction strengths are generally stronger in symmetric QWs compared to asymmetric ones, and that GaN exhibits greater interaction strength than GaAs in both types of QWs.*