2 results match your criteria: "College of Materials Science and Engineering Hunan University Changsha 410082 P. R. China.[Affiliation]"
Solar-powered N reduction in aqueous solution is becoming a research hotspot for ammonia production. Schottky junctions at the metal/semiconductor interface have been effective to build up a one-way channel for the delivery of photogenerated electrons toward photoredox reactions. However, their applications for enhancing the aqueous phase reduction of N to ammonia have been bottlenecked by the difficulty of N activation and the competing H evolution reaction (HER) at the metal surface.
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December 2020
Accurate design of the 2D metal-semiconductor (M-S) heterostructure via the covalent combination of appropriate metallic and semiconducting materials is urgently needed for fabricating high-performance nanodevices and enhancing catalytic performance. Hence, the lateral epitaxial growth of M-S Sn Mo S/MoS heterostructure is precisely prepared with in situ growth of metallic Sn Mo S by doping Sn atoms at semiconductor MoS edge via one-step chemical vapor deposition. The atomically sharp interface of this heterostructure exhibits clearly distinguished performance based on a series of characterizations.
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