2 results match your criteria: "Changwon National University 20 Changwondaehak-ro Changwon-si Gyeongsangnam-do 51140 Republic of Korea woonglee@changwon.ac.kr.[Affiliation]"
RSC Adv
June 2024
Dept. of Materials Convergence and System Engineering, Changwon National University 20 Changwondaehak-ro Changwon-si Gyeongsangnam-do 51140 Republic of Korea
A deep convolutional neural network (DCNN) architecture ResNet has been tested to verify its ability to handle selected area electron diffraction pattern (SADP) datasets carrying information on lattice defects including strains, thermal lattice vibrations, point defects, dislocations, and twin boundaries. The disordered states of the crystal lattices in the presence of these defects were predicted by molecular dynamics simulations, first principles geometry optimizations, and lattice manipulation operations in an effort to establish a possible dataset augmentation strategy for the improvement of classification performance of the ResNet. Using the disordered lattice information originating from the defects, test dataset SADPs were generated by simulating electron diffraction in transmission electron microscopy.
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November 2021
School of Materials Science and Engineering, Changwon National University 20 Changwondaehak-ro Changwon-si Gyeongsangnam-do 51140 Republic of Korea
Investigations have been made to explore the applicability of an off-the-shelf deep convolutional neural network (DCNN) architecture, residual neural network (ResNet), to the classification of the crystal structure of materials using electron diffraction patterns without prior knowledge of the material systems under consideration. The dataset required for training and validating the ResNet architectures was obtained by the computer simulation of the selected area electron diffraction (SAD) in transmission electron microscopy. Acceleration voltages, zone axes, and camera lengths were used as variables and crystal information format (CIF) files obtained from open crystal data repositories were used as inputs.
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