5 results match your criteria: "Centre for Physics and Technological Research (CeFITec)[Affiliation]"
Formation of nanoripples on ZnO flat substrates and nanorods by gas cluster ion bombardment.
Beilstein J Nanotechnol
February 2020
Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application, School of Physics and Technology, Wuhan University, Wuhan 430072, China.
In the present study Ar cluster ions accelerated by voltages in the range of 5-10 kV are used to irradiate single crystal ZnO substrates and nanorods to fabricate self-assembled surface nanoripple arrays. The ripple formation is observed when the incidence angle of the cluster beam is in the range of 30-70°. The influence of incidence angle, accelerating voltage, and fluence on the ripple formation is studied.
View Article and Find Full Text PDFSmall Al cluster ion implantation into Si and 4H-SiC.
Rapid Commun Mass Spectrom
September 2019
Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application, School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
Rationale: Continuously downscaling integrated circuit devices requires fabrication of shallower p-n junctions. The ion implantation approach at low energy is subject to low beam current due to the Coulomb repulsion. To overcome this problem cluster ions can be used for implantation.
View Article and Find Full Text PDFSputtering of silicon nanopowders by an argon cluster ion beam.
Beilstein J Nanotechnol
January 2019
Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application, School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
Article Synopsis
- The study used an Ar cluster ion beam to irradiate Si nanopowder targets, focusing on parameters like energy and dose.
- Results showed that sputtering yield decreased with higher doses and target densities, with an unusual peak at 17.3 keV where yield was significantly greater than bulk Si.
- The findings were attributed to a combination of finite size effects and debris formation impacting the sputtering process.
Cluster secondary ion emission of silicon: An influence of the samples' dimensional features.
Rapid Commun Mass Spectrom
February 2019
Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and Hubei Key Laboratory of Nuclear Solid Physics, School of Physics and Technology, Wuhan University, 430072, Wuhan, China.
Identification of human calculi with time-of-flight secondary ion mass spectrometry.
Rapid Commun Mass Spectrom
January 2010
Centre for Physics and Technological Research (CeFITec), Departamento de Física da Faculdade de Ciências e Tecnologia (FCT), Universidade Nova de Lisboa, 2829-516 Caparica, Portugal.
Time-of-flight secondary ion mass spectrometry was used to study four human calculi and to compare the results with those from twelve commercially available urinary calculi minerals including three organic compounds (L-cystine, uric acid and sodium urate). Phase identification of calcium phosphate compounds was carried out by considering the relative ion abundances of [Ca(2)O](+) and [CaPO(2)](+). Deprotonated [M-H](-) and protonated [M+H](+) uric acid were detected and used for component recognition in pure uric acid and in the mixed samples of struvite, calcium oxalate and uric acid.
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