Author Correction: Enhancing doping contrast and optimising quantification in the scanning electron microscope by surface treatment and Fermi level pinning.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Secure optical communication using a quantum alarm.

Optical fibre networks are advancing rapidly to meet growing traffic demands. Security issues, including attack management, have become increasingly important for optical communication networks because of the vulnerabilities associated with tapping light from optical fibre links. Physical layer security often requires restricting access to channels and periodic inspections of link performance.

Unravelling new principles of site-selective doping contrast in the dual-beam focused ion beam/scanning electron microscope.

Doping contrast using the secondary electron (SE) signal in the scanning electron microscope (SEM) can satisfy the International Roadmap for Semiconductors (ITRS) requisites for quantitative dopant profiling of next-generation integrated circuits and devices, but only if adopting a site-selective specimen preparation procedure. In this study, site-specific dopant profiling was performed on the trench side-wall cut by a 30-kV Ga focused ion beam (FIB) into silicon p-n junction specimens and milled using successively lower voltages in the dual-beam FIB/SEM. Although depositing the protective platinum strap on the surface effectively controls 'curtaining' effects at low final milling voltages, significantly reduced doping contrast from the side-wall compared to that from a cleaved surface subjected to the same ion-beam energy is ascribed to the material affected by a previous milling step, as well as the dissimilar geometries of milling and imaging.

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform.

To form a coherent quantum transport in hybrid superconductor-semiconductor (S-Sm) junctions, the formation of a homogeneous and barrier-free interface between two different materials is necessary. The S-Sm junction with high interface transparency will then facilitate the observation of the induced hard superconducting gap, which is the key requirement to access the topological phases (TPs) and observation of exotic quasiparticles such as Majorana zero modes (MZM) in hybrid systems. A material platform that can support observation of TPs and allows the realization of complex and branched geometries is therefore highly demanding in quantum processing and computing science and technology.

Enhancing doping contrast and optimising quantification in the scanning electron microscope by surface treatment and Fermi level pinning.

Recent advances in two-dimensional dopant profiling in the scanning electron microscope have enabled a high throughput, non-contact process diagnostics and failure analysis solution for integrated device manufacturing. The routine (electro)chemical etch processes to obtain contamination-free, hydrogen-terminated silicon surfaces is industrially important in ULSI microfabrication, though doping contrast, which is the basis for quantitative dopant profiling, will be strongly altered. We show herein that ammonium-fluoride treatment not only enabled doping contrast to be differentiated mainly by surface band-bending, but it enhanced the quality of linear quantitative calibration through simple univariate analysis for SE energies as low as 1 eV.

Publisher Correction: Time dependent decomposition of ammonia borane for the controlled production of 2D hexagonal boron nitride.

A correction to this article has been published and is linked from the HTML version of this paper. The error has been fixed in the paper.

Time dependent decomposition of ammonia borane for the controlled production of 2D hexagonal boron nitride.

Ammonia borane (AB) is among the most promising precursors for the large-scale synthesis of hexagonal boron nitride (h-BN) by chemical vapour deposition (CVD). Its non-toxic and non-flammable properties make AB particularly attractive for industry. AB decomposition under CVD conditions, however, is complex and hence has hindered tailored h-BN production and its exploitation.

On-Chip Andreev Devices: Hard Superconducting Gap and Quantum Transport in Ballistic Nb-In Ga As-Quantum-Well-Nb Josephson Junctions.

A superconducting hard gap in hybrid superconductor-semiconductor devices has been found to be necessary to access topological superconductivity that hosts Majorana modes (non-Abelian excitation). This requires the formation of homogeneous and barrier-free interfaces between the superconductor and semiconductor. Here, a new platform is reported for topological superconductivity based on hybrid Nb-In Ga As-quantum-well-Nb that results in hard superconducting gap detection in symmetric, planar, and ballistic Josephson junctions.

Direct Measurement of the Surface Energy of Graphene.

Graphene produced by chemical vapor deposition (CVD) is a promising candidate for implementing graphene in a range of technologies. In most device configurations, one side of the graphene is supported by a solid substrate, wheras the other side is in contact with a medium of interest, such as a liquid or other two-dimensional material within a van der Waals stack. In such devices, graphene interacts on both faces via noncovalent interactions and therefore surface energies are key parameters for device fabrication and operation.

Fermi level pinning characterisation on ammonium fluoride-treated surfaces of silicon by energy-filtered doping contrast in the scanning electron microscope.

Two-dimensional dopant profiling using the secondary electron (SE) signal in the scanning electron microscope (SEM) is a technique gaining impulse for its ability to enable rapid and contactless low-cost diagnostics for integrated device manufacturing. The basis is doping contrast from electrical p-n junctions, which can be influenced by wet-chemical processing methods typically adopted in ULSI technology. This paper describes the results of doping contrast studies by energy-filtering in the SEM from silicon p-n junction specimens that were etched in ammonium fluoride solution.

A specific nanomanufacturing challenge.

For a science to become a technology, a certain level of control has to have been established over the way items are fabricated for manufacture and use. Here we first consider the challenge of making and using a LEGO(®) brick scaled down by a factor of 10(n) for n = 0-6 in each spatial dimension, i.e.

Dopant profiling based on scanning electron and helium ion microscopy.

In this paper, we evaluate and compare doping contrast generated inside the scanning electron microscope (SEM) and scanning helium ion microscope (SHIM). Specialised energy-filtering techniques are often required to produce strong doping contrast to map donor distributions using the secondary electron (SE) signal in the SEM. However, strong doping contrast can be obtained from n-type regions in the SHIM, even without energy-filtering.

Low Power Resistive Oxygen Sensor Based on Sonochemical SrTi0.6Fe0.4O2.8 (STFO40).

The current paper reports on a sonochemical synthesis method for manufacturing nanostructured (typical grain size of 50 nm) SrTi0.6Fe0.4O2.

Visible diffraction from quasi-crystalline arrays of carbon nanotubes.

Large area arrays of vertically-aligned carbon nanotubes (VACNTs) are patterned in a quasi-crystalline Penrose tile arrangement through electron beam lithography definition of Ni catalyst dots and subsequent nanotube growth by plasma-enhanced chemical vapour deposition. When illuminated with a 532 nm laser beam high-quality and remarkable diffraction patterns are seen. The diffraction is well matched to theoretical calculations which assume apertures to be present at the location of the VACNTs for transmitted light.

Intrinsic top-down unmanufacturability.

Although small structures can be fabricated by deposition, lithography and etching, in some cases their intrinsic variability precludes their use as elements in useful arrays. Manufacture is a proper subset of fabrication. We show that structures with 3 nm design rules can be fabricated but not manufactured in a top-down approach-they do not have the reproducibility to give a satisfactory yield to a pre-ordained specification.

Broad spectrum measurement of the birefringence of an isothiocyanate based liquid crystal.

Tunable materials with high anisotropy of refractive index and low loss are of particular interest in the microwave and terahertz range. Nematic liquid crystals are highly sensitive to electric and magnetic fields and may be designed to have particularly high birefringence. In this paper we investigate birefringence and absorption losses in an isothiocyanate based liquid crystal (designed for high anisotropy) in a broad range of the electromagnetic spectrum, namely 0.

Growth of carbon nanotubes on fully processed silicon-on-insulator CMOS substrates.

This paper describes the growth of Carbon Nanotubes (CNTs) both aligned and non-aligned on fully processed CMOS substrates containing high temperature tungsten metallization. While the growth method has been demonstrated in fabricating CNT gas sensitive layers for high temperatures SOI CMOS sensors, it can be employed in a variety of applications which require the use of CNTs or other nanomaterials with CMOS electronics. In our experiments we have grown CNTs both on SOI CMOS substrates and SOI CMOS microhotplates (suspended on membranes formed by post-CMOS deep RIE etching).

Liquid crystal over silicon device characteristics for holographic projection of high-definition television images.

We discuss some fundamental characteristics of a phase-modulating device suitable to holographically project a monochrome video frame with 1280 x 720 resolution. The phase-modulating device is expected to be a liquid crystal over silicon chip with silicon area similar to that of commercial devices. Its basic characteristics, such as number of pixels, bits per pixel, and pixel dimensions, are optimized in terms of image quality and optical efficiency.