4 results match your criteria: "Center for Materials for Electronics Technology[Affiliation]"
Nat Commun
November 2022
Atom Based Device Group, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.
The Hubbard model is an essential tool for understanding many-body physics in condensed matter systems. Artificial lattices of dopants in silicon are a promising method for the analog quantum simulation of extended Fermi-Hubbard Hamiltonians in the strong interaction regime. However, complex atom-based device fabrication requirements have meant emulating a tunable two-dimensional Fermi-Hubbard Hamiltonian in silicon has not been achieved.
View Article and Find Full Text PDFPhys Chem Chem Phys
December 2012
Center for Materials for Electronics Technology, Off Pashan road, Panchawati, Pune 411008, India.
Magneto optical materials are currently of great interest, primarily for modern applications in optical isolation, modulation and switching in telecommunication. However, single crystals are the benchmark materials still used in these devices which are rather expensive and very difficult to fabricate. In this context, we are reporting herewith a stable and novel Bi(2)Te(3) quantum dot-glass nanosystem obtained using a controlled thermo-chemical method.
View Article and Find Full Text PDFDalton Trans
August 2011
Center for Materials for Electronics Technology, Department of Information Technology, Govt. Of India, Panchwati, Off Pashan Road, Pune, 411 008, Pune, India.
An Fe-metal complex with 2'-hydroxy chalcone (2'-HC) ligands [Fe(III) (2'-hydroxy chalcone)(3)] is synthesized by a chemical route and is subjected to different thermal treatments. Upon thermolysis in air at 450 °C for 3 h the complex yields maghemite (γ-Fe(2)O(3)) nanorods with a thin hematite (α-Fe(2)O(3)) shell. X-Ray diffraction (XRD), Mössbauer spectroscopy, diffuse reflectance spectroscopy (UV-DRS), high resolution transmission electron microscopy (HR-TEM), field emission scanning electron microscopy (FE-SEM) and vibrating sample magnetometry (VSM) are used to characterize the samples.
View Article and Find Full Text PDFAnn Chim
October 2007
Analytical Chemistry Division, Center for Materials for Electronics Technology (CMET), IDA, Phase-III, HCL Post, Cherlapalli, Hyderabad - 500 051, India.
A method was established for the determination of trace impurities in high purity tellurium (Te) 99.9999 (6N) by radio frequency glow discharge optical emission spectrometry (RF-GDOES). The optimized parameters are power, argon pressure, pre-integration time, analysis time and selection of wavelength.
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