Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs.

The presence of surface traps is an important phenomenon in AlGaN/GaN HEMT. The electrical and physical properties of these surface traps have been analyzed through the study of 2DEG electron concentration along with the variation of aluminum percentage in the barrier layer of HEMT. This analysis shows that from deep to shallow donors, the percentage change in electron density in 2DEG gets saturated (near 8%) with change in aluminum concentration.

A highly sensitive wearable flexible strain sensor based on polycrystalline MoS thin film.

The present study investigates the piezoresistive properties of polycrystalline MoS film for strain-sensing applications. The gauge factor (GF) of the flexible MoS device (MoS/PET) has been calculated to be 102 ± 5 in the stress range from ~7 MPa to ~14 MPa. In addition, to improve the sensing stress range, the flexible strain sensors are encapsulated by SU-8.

Effect of substrates on structural and optical properties of tin oxide (SnO2) nanostructures.

We report on controlling the morphology of tin oxide (SnO2) nanostructures and the study of the effect of surface morphology on structural and optical properties of SnO2 nanostuctures. In present work, Tin oxide (SnO2) nanostructures such as nanowires and nanorods have been grown by thermal evaporation of SnO2 powder. To demonstrate the effect of different substrates on the morphology of grown SnO2 nanostructures, the thermal evaporation of SnO2 powder was carried out on Si and gold catalyzed Si (Au/Si) substrates.