Altermagnetic Anomalous Hall Effect Emerging from Electronic Correlations.

While altermagnetic materials are characterized by a vanishing net magnetic moment, their symmetry in principle allows for the existence of an anomalous Hall effect. Here, we introduce a model with altermagnetism in which the emergence of an anomalous Hall effect is driven by interactions. This model is grounded in a modified Kane-Mele framework with antiferromagnetic spin-spin correlations.

Morphological and optical investigation of 2D material-based ternary nanocomposite: BiO/MgO/GO synthesized by a co-precipitation technique.

A ternary oxide nanocomposite based on BiO/MgO/GO was prepared using a co-precipitation method for photoconductive device applications. The structure and morphology of the as-prepared nanocomposite were characterized analytically using X-ray diffraction (XRD), scanning electron microscopy (SEM), electron dispersive spectroscopy (EDS) techniques, and optical characterization was made using Fourier-transform infrared (FTIR) spectroscopy, photoluminescence (PL), and UV-vis spectroscopy techniques. The heterostructure of the crystal with a crystallite size of 28.

High performance and gate-controlled GeSe/HfS negative differential resistance device.

Transition metal dichalcogenides (TMDs) have received significant attention owing to their thickness-dependent folded current-voltage ( - ) characteristics, which offer various threshold voltage values. Owing to these astonishing characteristics, TMDs based negative differential resistance (NDR) devices are preferred for the realization of multi-valued logic applications. In this study, an innovative and ground-breaking germanium selenide/hafnium disulfide (p-GeSe/n-HfS) TMDs van der Waals heterostructure (vdWH) NDR device is designed.

Strain tuned topology in the Haldane and the modified Haldane models.

We study the interplay between a uniaxial strain and the topology of the Haldane and the modified Haldane models which, respectively, exhibit chiral and antichiral edge modes. The latter were, recently, predicted by Colomés and Franz (2018 Phys. Rev.

Mobility gap and quantum transport in a functionalized graphene bilayer.

In a Bernal graphene bilayer, carbon atoms belong to two inequivalent sublattices A and B, with atoms that are coupled to the other layer by [Formula: see text] bonds belonging to sublattice A and the other atoms belonging to sublattice B. We analyze the density of states and the conductivity of Bernal graphene bilayers when atoms of sublattice A or B only are randomly functionalized. We find that for a selective functionalization on sublattice B only, a mobility gap of the order of 0.

Interlayer magnetoresistance in multilayer Dirac electron systems: motion and merging of Dirac cones.

We theoretically study the effect of the motion and the merging of Dirac cones on the interlayer magnetoresistance in multilayer graphene-like systems. This merging, which can be induced by a uniaxial strain, gives rise in a monolayer Dirac electron system to a topological transition from a semi-metallic phase to an insulating phase whereby Dirac points disappear. Based on a universal Hamiltonian, proposed to describe the motion and the merging of Dirac points in two-dimensional Dirac electron crystals, we calculate the interlayer conductivity of a stack of deformed graphene-like layers using the Kubo formula in the quantum limit where only the contribution of the n = 0 Landau level is relevant.

Eco1524I, a type II restriction endonuclease: isolation, partial purification, and characterization.

Various strains of Escherichia coli, isolated from different patients, were screened for type II restriction endonuclease activity. In 1 out of 23 patients, a type II restriction endonuclease activity was found. The restriction endonuclease designated Eco1524I was purified to near homogeneity, based on hydroxyapatite and heparin sepharose chromatography.