Phase-change memory (PCM) uses materials that can change resistance states slowly, allowing for reliable multilevel data storage, making it a potential choice for AI applications that need large data handling.
The study focused on analyzing the properties of Te(GeSe)Y thin films through various methods, including structural characterization and optical property assessments, yielding insights into their refractive index and optical absorption.
Results indicated improved optical properties in the films, suggesting their suitability for various photonic applications, although challenges remain in achieving both thermal stability and fast operational speeds in PCM technology.