2 results match your criteria: "CEMEF-Center for Material Forming[Affiliation]"
Study of GaN coalescence by dark-field X-ray microscopy at the nanoscale.
J Appl Crystallogr
June 2023
Univ. Grenoble Alpes, CEA-LETI, 38000 Grenoble, France.
Article Synopsis
- This work presents dark-field X-ray microscopy (DFXM) as a powerful 3D imaging technique for analyzing novel gallium nitride (GaN) structures on nano-pillars designed for optoelectronic devices.
- The GaN layers are expected to bond cohesively into a well-oriented film due to the softening of the SiO layer during growth, with DFXM achieving extremely precise orientation (standard deviation of 0.04°) for GaN nanostructures.
- The findings from both nanoscale DFXM and macro-scale X-ray diffraction confirm that the coalescing GaN layers cause intentional misorientation in the silicon nano-pillars, highlighting the technique's potential for developing high-quality GaN
An Efficient Computational Model for Magnetic Pulse Forming of Thin Structures.
Materials (Basel)
December 2021
MINES Paris-Tech, PSL-Research University, CEMEF-Center for Material Forming, CNRS UMR 7635, BP 207, 1 Rue ClaudeDaunesse, CEDEX, 06904 Sophia Antipolis, France.
Electromagnetic forming (EMF) is one of the most popular high-speed forming processes for sheet metals. However, modeling this process in 3D often requires huge computational time since it deals with a strongly coupled multi-physics problem. The numerical tools that are capable of modeling this process rely either on shell elements-based approaches or on full 3D elements-based approaches.
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