5 results match your criteria: "Birck Nanotechnology Center Purdue University[Affiliation]"
Adv Sci (Weinh)
February 2021
The design of epitaxial semiconductor-superconductor and semiconductor-metal quantum devices requires a detailed understanding of the interfacial electronic band structure. However, the band alignment of buried interfaces is difficult to predict theoretically and to measure experimentally. This work presents a procedure that allows to reliably determine critical parameters for engineering quantum devices; band offset, band bending profile, and number of occupied quantum well subbands of interfacial accumulation layers at semiconductor-metal interfaces.
View Article and Find Full Text PDFJ Chem Phys
November 2016
School of Materials Engineering and Birck Nanotechnology Center Purdue University, West Lafayette, Indiana 47906, USA.
Layered transition metal dichalcogenides are emerging as key materials in nanoelectronics and energy applications. Predictive models to understand their growth, thermomechanical properties, and interaction with metals are needed in order to accelerate their incorporation into commercial products. Interatomic potentials enable large-scale atomistic simulations connecting first principle methods and devices.
View Article and Find Full Text PDFJ Chem Phys
February 2015
School of Materials Engineering and Birck Nanotechnology Center Purdue University, West Lafayette, Indiana 47907, USA.
We use a particle-based mesoscale model that incorporates chemical reactions at a coarse-grained level to study the response of materials that undergo volume-reducing chemical reactions under shockwave-loading conditions. We find that such chemical reactions can attenuate the shockwave and characterize how the parameters of the chemical model affect this behavior. The simulations show that the magnitude of the volume collapse and velocity at which the chemistry propagates are critical to weaken the shock, whereas the energetics in the reactions play only a minor role.
View Article and Find Full Text PDFSci Rep
January 2014
School of Mechanical Engineering, Birck Nanotechnology Center Purdue University, West Lafayette, Indiana 47907.
We demonstrate synthesis of silicon nanowires of tens of nanometers via laser induced chemical vapor deposition. These nanowires with diameters as small as 60 nm are produced by the interference between incident laser radiation and surface scattered radiation within a diffraction limited spot, which causes spatially confined, periodic heating needed for high resolution chemical vapor deposition. By controlling the intensity and polarization direction of the incident radiation, multiple parallel nanowires can be simultaneously synthesized.
View Article and Find Full Text PDFAdv Mater
February 2009
School of Electrical and Computer Engineering, and Birck Nanotechnology Center Purdue University 465 Northwestern Ave West Lafayette, IN 47907 (USA).