A high-pressure soft sputtering technique enables the growth of large-area 1T' phase MoTe sheets on HOPG and AlO substrates at relatively low temperatures (300 °C).
The study found that a single co-sputtering step resulted in highly defected films, but using a two-step technique—first depositing on an unheated substrate followed by annealing—significantly improved the stoichiometry of the films.
The best MoTe film synthesized had a low tellurium vacancy content and demonstrated n-type conductivity, highlighting the potential for large-scale production of tellurium-based materials while also addressing the difficulties in achieving stoichiometric MoTe thin films.