Towards graphene-based asymmetric diodes: a density functional tight-binding study.

Self-consistent charge density functional tight-binding (DFTB) calculations have been performed to investigate the electrical properties and transport behavior of asymmetric graphene devices (AGDs). Three different nanodevices constructed of different necks of 8 nm, 6 nm and 4 nm, named Graphene-N8, Graphene-N6 and Graphene-N4, respectively, have been proposed. All devices have been tested under two conditions of zero gate voltage and an applied gate voltage of +20 V using a dielectric medium of 3.

Unbiased Plasmonic-Assisted Integrated Graphene Photodetectors.

Photonic integrated circuits (PICs) for next-generation optical communication interconnects and all-optical signal processing require efficient (∼A/W) and fast (≥25 Gbs) light detection at low ( View Article and Find Full Text PDF

Evidence for Local Spots of Viscous Electron Flow in Graphene at Moderate Mobility.

Dominating electron-electron scattering enables viscous electron flow exhibiting hydrodynamic current density patterns, such as Poiseuille profiles or vortices. The viscous regime has recently been observed in graphene by nonlocal transport experiments and mapping of the Poiseuille profile. Herein, we probe the current-induced surface potential maps of graphene field-effect transistors with moderate mobility using scanning probe microscopy at room temperature.

Large-area integration of two-dimensional materials and their heterostructures by wafer bonding.

Integrating two-dimensional (2D) materials into semiconductor manufacturing lines is essential to exploit their material properties in a wide range of application areas. However, current approaches are not compatible with high-volume manufacturing on wafer level. Here, we report a generic methodology for large-area integration of 2D materials by adhesive wafer bonding.

Graphene-Quantum Dot Hybrid Photodetectors with Low Dark-Current Readout.

Graphene-based photodetectors have shown responsivities up to 10 A/W and photoconductive gains up to 10 electrons per photon. These photodetectors rely on a highly absorbing layer in close proximity to graphene, which induces a shift of the graphene chemical potential upon absorption, hence modifying its channel resistance. However, due to the semimetallic nature of graphene, the readout requires dark currents of hundreds of microamperes up to milliamperes, leading to high power consumption needed for the device operation.

Nanoelectromechanical Sensors Based on Suspended 2D Materials.

The unique properties and atomic thickness of two-dimensional (2D) materials enable smaller and better nanoelectromechanical sensors with novel functionalities. During the last decade, many studies have successfully shown the feasibility of using suspended membranes of 2D materials in pressure sensors, microphones, accelerometers, and mass and gas sensors. In this review, we explain the different sensing concepts and give an overview of the relevant material properties, fabrication routes, and device operation principles.

Insulators for 2D nanoelectronics: the gap to bridge.

Nanoelectronic devices based on 2D materials are far from delivering their full theoretical performance potential due to the lack of scalable insulators. Amorphous oxides that work well in silicon technology have ill-defined interfaces with 2D materials and numerous defects, while 2D hexagonal boron nitride does not meet required dielectric specifications. The list of suitable alternative insulators is currently very limited.

Manufacture and characterization of graphene membranes with suspended silicon proof masses for MEMS and NEMS applications.

Graphene's unparalleled strength, chemical stability, ultimate surface-to-volume ratio and excellent electronic properties make it an ideal candidate as a material for membranes in micro- and nanoelectromechanical systems (MEMS and NEMS). However, the integration of graphene into MEMS or NEMS devices and suspended structures such as proof masses on graphene membranes raises several technological challenges, including collapse and rupture of the graphene. We have developed a robust route for realizing membranes made of double-layer CVD graphene and suspending large silicon proof masses on membranes with high yields.

Gate-tunable graphene-based Hall sensors on flexible substrates with increased sensitivity.

We demonstrate a novel concept for operating graphene-based Hall sensors using an alternating current (AC) modulated gate voltage, which provides three important advantages compared to Hall sensors under static operation: (1) The sensor sensitivity can be doubled by utilizing both n- and p-type conductance. (2) A static magnetic field can be read out at frequencies in the kHz range, where the 1/f noise is lower compared to the static case. (3) The off-set voltage in the Hall signal can be reduced.

Influence of Humidity on Contact Resistance in Graphene Devices.

The electrical contact resistance at metal-graphene interfaces can significantly degrade the properties of graphene devices and is currently hindering the full exploitation of graphene's potential. Therefore, the influence of environmental factors, such as humidity, on the metal-graphene contact resistance is of interest for all graphene devices that operate without hermetic packaging. We experimentally studied the influence of humidity on bottom-contacted chemical-vapor-deposited (CVD) graphene-gold contacts, by extracting the contact resistance from transmission line model (TLM) test structures.

Highly Sensitive Electromechanical Piezoresistive Pressure Sensors Based on Large-Area Layered PtSe Films.

Two-dimensional (2D) layered materials are ideal for micro- and nanoelectromechanical systems (MEMS/NEMS) due to their ultimate thinness. Platinum diselenide (PtSe), an exciting and unexplored 2D transition metal dichalcogenide material, is particularly interesting because its low temperature growth process is scalable and compatible with silicon technology. Here, we report the potential of thin PtSe films as electromechanical piezoresistive sensors.

Strain Gauges Based on CVD Graphene Layers and Exfoliated Graphene Nanoplatelets with Enhanced Reproducibility and Scalability for Large Quantities.

The two-dimensional material graphene promises a broad variety of sensing activities. Based on its low weight and high versatility, the sensor density can significantly be increased on a structure, which can improve reliability and reduce fluctuation in damage detection strategies such as structural health monitoring (SHM). Moreover; it initializes the basis of structure-sensor fusion towards self-sensing structures.

Toward Highly Sensitive and Energy Efficient Ammonia Gas Detection with Modified Single-Walled Carbon Nanotubes at Room Temperature.

Fabrication and comparative analysis of the gas sensing devices based on individualized single-walled carbon nanotubes of four different types (pristine, boron doped, nitrogen doped, and semiconducting ones) for detection of low concentrations of ammonia is presented. The comparison of the detection performance of different devices, in terms of resistance change under exposure to ammonia at low concentrations combined with the detailed analysis of chemical bonding of dopant atoms to nanotube walls sheds light on the interaction of NH with carbon nanotubes. Furthermore, chemoresistive measurements showed that the use of semiconducting nanotubes as conducting channels leads to the highest sensitivity of devices compared to the other materials.

High performance metal-insulator-graphene diodes for radio frequency power detection application.

Vertical metal-insulator-graphene (MIG) diodes for radio frequency (RF) power detection are realized using a scalable approach based on graphene grown by chemical vapor deposition and TiO as barrier material. The temperature dependent current flow through the diode can be described by thermionic emission theory taking into account a bias induced barrier lowering at the graphene TiO interface. The diodes show excellent figures of merit for static operation, including high on-current density of up to 28 A cm, high asymmetry of up to 520, strong maximum nonlinearity of up to 15, and large maximum responsivity of up to 26 V, outperforming state-of-the-art metal-insulator-metal and MIG diodes.

Flexible Hall sensors based on graphene.

The excellent electronic and mechanical properties of graphene provide a perfect basis for high performance flexible electronic and sensor devices. Here, we present the fabrication and characterization of flexible graphene based Hall sensors. The Hall sensors are fabricated on 50 μm thick flexible Kapton foil using large scale graphene grown by chemical vapor deposition technique on copper foil.

Experimental verification of electro-refractive phase modulation in graphene.

Graphene has been considered as a promising material for opto-electronic devices, because of its tunable and wideband optical properties. In this work, we demonstrate electro-refractive phase modulation in graphene at wavelengths from 1530 to 1570 nm. By integrating a gated graphene layer in a silicon-waveguide based Mach-Zehnder interferometer, the key parameters of a phase modulator like change in effective refractive index, insertion loss and absorption change are extracted.

Basal-Plane Functionalization of Chemically Exfoliated Molybdenum Disulfide by Diazonium Salts.

Although transition metal dichalcogenides such as MoS2 have been recognized as highly potent two-dimensional nanomaterials, general methods to chemically functionalize them are scarce. Herein, we demonstrate a functionalization route that results in organic groups bonded to the MoS2 surface via covalent C-S bonds. This is based on lithium intercalation, chemical exfoliation and subsequent quenching of the negative charges residing on the MoS2 by electrophiles such as diazonium salts.

Highly air stable passivation of graphene based field effect devices.

The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hysteresis free DC characteristics, low doping level GFETs stable over weeks though operated and stored in ambient atmosphere.

Electronics based on two-dimensional materials.

The compelling demand for higher performance and lower power consumption in electronic systems is the main driving force of the electronics industry's quest for devices and/or architectures based on new materials. Here, we provide a review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches. We focus on the performance limits and advantages of these materials and associated technologies, when exploited for both digital and analog applications, focusing on the main figures of merit needed to meet industry requirements.

Current saturation and voltage gain in bilayer graphene field effect transistors.

The emergence of graphene with its unique electrical properties has triggered hopes in the electronic devices community regarding its exploitation as a channel material in field effect transistors. Graphene is especially promising for devices working at frequencies in the 100 GHz range. So far, graphene field effect transistors (GFETs) have shown cutoff frequencies up to 300 GHz, while exhibiting poor voltage gains, another important figure of merit for analog high frequency applications.

High on/off ratios in bilayer graphene field effect transistors realized by surface dopants.

The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic, and sensor applications. So far the operation of bilayer graphene-based field effect transistors requires two individual gates to vary the channel's conductance and to create a band gap. In this paper, we report on a method to increase the on/off ratio in single gated bilayer graphene field effect transistors by adsorbate doping.

The fabrication of a flexible mold for high resolution soft ultraviolet nanoimprint lithography.

One key issue for all nanoimprint techniques is an appropriate method for the fabrication of desirable molds. We report on a novel flexible mold fabrication process-pressure-assisted molding (PAM)-for high resolution soft ultraviolet nanoimprint lithography (soft UV-NIL). In PAM, enhanced master filling is achieved by applying an external pressure during the mold fabrication process.