7 results match your criteria: "Advanced Functional Polymers Center[Affiliation]"

Thin-film transistors offer excellent and uniform electrical properties over large areas, making them a promising option for various future electronic devices. Polyimide dielectrics are already widely used in various electronic devices because of their exceptional dielectric properties, thermal stability, and desirable mechanical flexibility, which make them suitable for harsh environments. However, the current research on polyimide dielectric materials has certain limitations, such as the use of toxic solvents, high-temperature processes, and deficient coating properties.

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Self-Powered Electrical Bandage Based on Body-Coupled Energy Harvesting.

Adv Mater

August 2024

Department of Materials Science and Engineering, Center for Human-oriented Triboelectric Energy Harvesting, Yonsei University, Seoul, 03722, Republic of Korea.

Article Synopsis
  • * The SEB operates wirelessly using a continuous 60-Hz sinusoidal electrical potential derived from the human body and surrounding electrical waves, enhanced by a special composite material.
  • * Preclinical studies show that SEBs can significantly accelerate wound recovery, suggesting their potential application in various wound care technologies.
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Controlling Fluorination Density of Soluble Polyimide Gate Dielectrics and its Influence on Organic Crystal Growth and Device Operational Stability.

ACS Appl Mater Interfaces

April 2024

SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea.

Fluorinated polyimides (PIs) are among the most promising candidates for gate dielectric materials in organic electronic devices because of their solution processability and outstanding chemical, mechanical, and thermal stabilities. Additionally, fluorine (F) substitution improves the electrical properties of PI thin films, such as enhanced dielectric properties and reduced surface trap densities. However, the relationship between the fluorination density of PIs and crystal growth modes of vacuum-deposited conjugated molecules on PI thin films, which is directly related to the lateral charge transport along the PI-organic semiconductor interface, has not been systematically studied.

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Macroporous polymers have gained significant attention due to their unique mass transport and size-selective properties. In this study, we focused on Polyimide (PI), a high-performance polymer, as an ideal candidate for macroporous structures. Despite various attempts to create macroporous PI (Macro PI) using emulsion templates, challenges remained, including limited chemical diversity and poor control over pore size and porosity.

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For stable battery operation of silicon (Si)-based anodes, utilizing cross-linked three-dimensional (3D) network binders has emerged as an effective strategy to mitigate significant volume fluctuations of Si particles. In the design of cross-linked network binders, careful selection of appropriate cross-linking agents is crucial to maintaining a balance between the robustness and functionality of the network. Herein, we strategically design and optimize a 3D cross-linked network binder through a comprehensive analysis of cross-linking agents.

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Here, we proposed an eco-friendly synthetic method for synthesizing hybrid composites with ultralow dielectric properties at high frequencies up to 28 GHz for true 5G communication from aqueous aromatic polyimide (PI) polymers and dual-porous silica nanoparticles (DPS). The "one-step" water-based emulsion template method was used to synthesize the macroporous silica nanoparticles (MPS). A substantially negative ζ potential was produced along the surface of MPS by the poly(vinylpyrrolidone)-based chemical functionalization, enabling excellent aqueous dispersion stability.

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The increasing demand for solution-processed and flexible organic electronics has promoted the fabrication of integrated logic circuits using organic field-effect transistors (OFETs) instead of fundamental unit devices. This has been made possible through the rapid development of materials and processes in the past few decades. It is important for the p- and n-type OFETs using different organic semiconductors (OSCs) to have complementarily matched electrical characteristics, which significantly improve the performance of organic logic circuits.

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