Two different phase-change origins with chemical- and structural-phase-changes in C doped (1.5 wt.%) InSbTe.

We fabricated C-doped (1.5 wt.%) InSbTe (CIST) thin films with amorphous phase (a-CIST) using a sputter method.

Bandgap measurement of thin dielectric films using monochromated STEM-EELS.

High-resolution electron energy-loss spectroscopy (HR-EELS), achieved by attaching electron monochromators to transmission electron microscopes (TEM), has proved to be a powerful tool for measuring bandgaps. However, the method itself is still uncertain, due to Cerenkov loss and surface effects that can potentially influence the quality of EELS data. In the present study, we achieved an energy resolution of about 0.

In situ dynamic HR-TEM and EELS study on phase transitions of Ge2Sb2Te5 chalcogenides.

The phase transition phenomena of Ge2Sb2Te5 chalcogenides were investigated by in situ dynamic high-resolution transmission electron microscopy (HR-TEM) and electron energy loss spectroscopy (EELS). A 300kV field emission TEM and a 1250kV high voltage TEM were employed for the in situ heating experiments from 20 to 500 degrees C for undoped and 3wt% nitrogen-doped Ge2Sb2Te5 thin films deposited by DC sputtering. Crystallization of amorphous Ge2Sb2Te5 to its cubic structure phase started at 130 degrees C and then rapid crystal growth developed from cubic to hexagonal phase in the range of 130-350 degrees C; finally, the hexagonal crystals started to melt at 500 degrees C.

A sonochemical route to single-walled carbon nanotubes under ambient conditions.

A chemical route to single-walled carbon nanotubes (SWCNTs) under ambient conditions has been developed. Silica powder was immersed in a mixture solution of ferrocene and p-xylene. After sonication at atmospheric pressure and room temperature, we obtained high-purity SWCNTs.