59 results match your criteria: "A.V. Rzhanov Institute of Semiconductor Physics[Affiliation]"
Sci Rep
April 2015
1] Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA [2] Novosibirsk State University, Pirogova str. 2, Novosibirsk 630090, Russia [3] A. V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, 630090 Russia.
There has been remarkable recent progress in engineering high-dielectric constant two dimensional (2D) materials, which are being actively pursued for applications in nanoelectronics in capacitor and memory devices, energy storage, and high-frequency modulation in communication devices. Yet many of the unique properties of these systems are poorly understood and remain unexplored. Here we report a numerical study of hopping conductivity of the lateral network of capacitors, which models two-dimensional insulators, and demonstrate that 2D long-range Coulomb interactions lead to peculiar size effects.
View Article and Find Full Text PDFPhys Rev Lett
May 2014
Experimental and Applied Physics, University of Regensburg, D-93040 Regensburg, Germany.
We investigate the magnetotransport properties of strained 80 nm thick HgTe layers featuring a high mobility of μ ∼ 4 × 10(5) cm(2)/V · s. By means of a top gate, the Fermi energy is tuned from the valence band through the Dirac-type surface states into the conduction band. Magnetotransport measurements allow us to disentangle the different contributions of conduction band electrons, holes, and Dirac electrons to the conductivity.
View Article and Find Full Text PDFJ Nanosci Nanotechnol
November 2012
A.V. Rzhanov Institute of Semiconductor Physics SB RAS, Lavrent'eva Ave., 13, 630090 Novosibirsk, Russia.
The SiO(x) films of various stoichiometries deposited on Si substrates with the use of the co-sputtering from two separate Si and SiO2 targets were annealed by femtosecond laser pulses. Femtosecond laser treatments were applied for crystallization of amorphous silicon nanoclusters in the silicon-rich oxide films. The treatments were carried out with the use of Ti-Sapphire laser with wavelength 800 nm and pulse duration about 30 fs.
View Article and Find Full Text PDFOpt Lett
February 2013
A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia.
A modified effective index method (MEIM), which correctly describes, in a 2D case, both the phase and the group indexes in a 3D photonic wire waveguide, is introduced in the Letter. The MEIM utilizes the combined index profile with two spatial parameters. The central part with wire index has the width of nearly a wire height, and it is responsible for the group index.
View Article and Find Full Text PDFNanotechnology
August 2012
A V Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Prospekt Lavrentieva 13, 630090 Russia.
A few-layer graphene-based hybrid material with high thermal and chemical stability and reproducible and tunable electronic properties was fabricated by intercalation of N-methylpyrrolidone into a few-layer graphene combined with heat treatment. Depending on the process temperature, the obtained material could be produced with the following properties: a broad range of resistivity values (six to seven orders of magnitude) in combination with a high carrier mobility, a tunable band-gap (from 0 up to 3-4 eV) and sp² or sp³ hybridization of carbon atoms. The extremely strong step-like temperature dependence (within 10 °C) of its properties observed in the vicinity of two temperatures, 90 and 200 °C, seems to be important for various applications.
View Article and Find Full Text PDFNanotechnology
March 2012
A V Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia.
We report the observation of the Fermi energy controlled redirection of the ballistic electron flow in a three-terminal system based on a small (100 nm) triangular quantum dot defined in a two-dimensional electron gas (2DEG). Measurement shows strong large-scale sign-changing oscillations of the partial conductance coefficient difference G(21) - G(23) on the gate voltage in zero magnetic field. Simple formulas and numerical simulation show that the effect can be explained by quantum interference and is associated with weak asymmetry of the dot or inequality of the ports connecting the dot to the 2DEG reservoirs.
View Article and Find Full Text PDFOpt Lett
October 2011
A.V. Rzhanov Institute of Semiconductor Physics SB RAS, Prospect Lavrenteva 13, 630090 Novosibirsk, Russia.
Fiber optic sensors are typically used with expensive tunable lasers or optical spectrum analyzers for wavelength interrogation. We propose to replace the tunable laser by a broadband optical source incorporated with a novel thin linewidth acousto-optic tunable filter. It utilizes optical beam expanders constituted by photonic crystal rows of air holes in LiNbO(3) waveguide.
View Article and Find Full Text PDFNanotechnology
July 2011
A V Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia.
Extremely high gas sensing properties of p-type few layer graphene flakes exfoliated from highly oriented pyrolytic graphite have been demonstrated. The current response to ammonia adsorption is strongly dependent on film thickness and is higher than that for graphene by 1-8 orders of magnitude. A maximal response was found for sample thickness ∼ 2 nm.
View Article and Find Full Text PDFOpt Lett
December 2008
A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia.
A motion-induced optical bistability is shown for a metal nanoparticle dimer that is plasmon coupled and bound with dispersion (colloidal) forces. The effect does not require any material nonlinearity.
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