59 results match your criteria: "A.V. Rzhanov Institute of Semiconductor Physics[Affiliation]"

Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both on Si and silicon-on-insulator (SOI) substrates were investigated. Elastic strained state of grown films was demonstrated by x-ray diffractometry. Annealing of p-i-n structures before the mesa fabrication can improve the ideality factor of current-voltage characteristics.

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Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both on Si and silicon-on-insulator (SOI) substrates were investigated. Elastic strained state of grown films was demonstrated by x-ray diffractometry. Annealing of p-i-n structures before the mesa fabrication can improve the ideality factor of current-voltage characteristics.

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We demonstrate local phonon analysis of single AlN nanocrystals by two complementary imaging spectroscopic techniques: tip-enhanced Raman scattering (TERS) and nano-Fourier transform infrared (nano-FTIR) spectroscopy. Strong surface optical (SO) phonon modes appear in the TERS spectra with their intensities revealing a weak polarization dependence. The local electric field enhancement stemming from the plasmon mode of the TERS tip modifies the phonon response of the sample, making the SO mode dominate over other phonon modes.

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In the case of structureless bosons, cooled down to low temperatures, the absorption of electromagnetic waves by their Bose-Einstein condensate is usually forbidden due to the momentum and energy conservation laws: the phase velocity of the collective modes of the condensate called bogolons is sufficiently lower than the speed of light. Thus, only the light scattering processes persist. However, the situation might be different in the case of composite bosons or the bosons with an internal structure.

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Strong light fields have created opportunities to tailor novel functionalities of solids. Floquet-Bloch states can form under periodic driving of electrons and enable exotic quantum phases. On subcycle timescales, lightwaves can simultaneously drive intraband currents and interband transitions, which enable high-harmonic generation and pave the way towards ultrafast electronics.

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Recently discovered intrinsic magnetic topological insulators (IMTIs) constitute a unique class of quantum materials that combine magnetism and nontrivial topology. One of the most promising applications of these materials is Majorana fermion creation; Majorana fermions are expected to arise when a superconductor is in contact with the surface of an IMTI. Here we study the adsorption of Pb ultrathin films on top of IMTIs of various stoichiometries.

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This work presents an overview of the latest results and new data on the optical response from spherical CdSe nanocrystals (NCs) obtained using surface-enhanced Raman scattering (SERS) and tip-enhanced Raman scattering (TERS). SERS is based on the enhancement of the phonon response from nanoobjects such as molecules or inorganic nanostructures placed on metal nanostructured substrates with a localized surface plasmon resonance (LSPR). A drastic SERS enhancement for optical phonons in semiconductor nanostructures can be achieved by a proper choice of the plasmonic substrate, for which the LSPR energy coincides with the laser excitation energy.

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Acoustically Induced Giant Synthetic Hall Voltages in Graphene.

Phys Rev Lett

June 2022

Center for Hybrid Nanostructures, Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany.

Any departure from graphene's flatness leads to the emergence of artificial gauge fields that act on the motion of the Dirac fermions through an associated pseudomagnetic field. Here, we demonstrate the tunability of strong gauge fields in nonlocal experiments using a large planar graphene sheet that conforms to the deformation of a piezoelectric layer by a surface acoustic wave. The acoustic wave induces a longitudinal and a giant synthetic Hall voltage in the absence of external magnetic fields.

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In quantum wells (QWs) formed in HgCdTe/CdHgTe heterosystems with a variable composition of Cd(Hg), Shubnikov-de-Haas (SdH) oscillations are investigated to characterize the Rashba-type spin-orbit coupling in QWs with both a normal and inverted band structure. Several methods of extracting the Rashba spin-splitting at zero magnetic field and their magnetic field dependences from the beatings of SdH oscillations are used for greater reliability. The large and similar Rashba splitting (25-27 meV) is found for different kinds of spectrum, explained by a significant fraction of the p-type wave functions, in both the E1 subband of the sample with a normal spectrum and the H1 subband for the sample with an inverted one.

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Article Synopsis
  • The study explores the effects of V doping in the semiconductor BiTeI, which is significant for spintronics and quantum computing due to its strong spin-orbit coupling and ferromagnetic properties.
  • Using angle-resolved photoemission spectroscopy (ARPES), it is found that the Kramers point (KP) gap varies non-monotonically with V concentration, increasing up to 3% doping before decreasing again.
  • The research indicates that the change in KP gap and saturation magnetisation is linked to the antiferromagnetic coupling of magnetic impurities at higher doping levels, affecting the overall magnetic moment and gap characteristics.
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The theory of electron energy relaxation in a hybrid structure consisting of quantum dot interacting with a two dimensional exciton gas in Bose-Einstein condensate (BEC) regime is developed. A new type of the relaxation mechanism in the presence of BEC is introduced and theoretically analyzed. It is shown that, in the first order of electron-exciton interaction, two microscopic processes of energy relaxation appear.

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Tunable non-integer high-harmonic generation in a topological insulator.

Nature

May 2021

Institute of Experimental and Applied Physics, University of Regensburg, Regensburg, Germany.

When intense lightwaves accelerate electrons through a solid, the emerging high-order harmonic (HH) radiation offers key insights into the material. Sub-optical-cycle dynamics-such as dynamical Bloch oscillations, quasiparticle collisions, valley pseudospin switching and heating of Dirac gases-leave fingerprints in the HH spectra of conventional solids. Topologically non-trivial matter with invariants that are robust against imperfections has been predicted to support unconventional HH generation.

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Semiconducting nanoplatelets (NPLs) have attracted great attention due to the superior photophysical properties compared to their quantum dot analogs. Understanding and tuning the optical and electronic properties of NPLs in a plasmonic environment is a new paradigm in the field of optoelectronics. Here, we report on the resonant plasmon enhancement of light emission including Raman scattering and photoluminescence from colloidal CdSe/CdS nanoplatelets deposited on arrays of Au nanodisks fabricated by electron beam lithography.

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Tip-enhanced Raman scattering (TERS) has recently emerged as a powerful technique for studying the local properties of low dimensional materials. Being a plasmon driven system, a dramatic enhancement of the TERS sensitivity can be achieved by an appropriate choice of the plasmonic substrate in the so-called gap-mode configuration. Here, we investigate the phonon properties of CdSe nanocrystals (NCs) utilizing gap-mode TERS.

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The experimental evidence of the influence of the structural phase transition on the elastic and optoelectronic properties of CHNHPbIsingle crystals has been reported. A peak in the attenuation for longitudinal and shear ultrasonic waves and a step-like anomaly in their velocity have been found near the structural the orthorhombic-to-tetragonal phase transition (160 K). The narrow hysteresis observed in the temperature dependences of the elastic properties confirms that this is the first-order phase transition.

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The solid-state dewetting phenomenon in Ge layers on SiO is investigated as a function of layer thickness d (from 10 to 86 nm) and annealing temperature. The dewetting is initiated at about 580-700 °C, depending on d, through the appearance of surface undulation leading to the particle formation and the rupture of Ge layers by narrow channels or rounded holes in the layers with the thicknesses of 10-60 and 86 nm, respectively. The channel widths are significantly narrower than the distance between the particles that causes the formation of thinned Ge layer areas between particles at the middle dewetting stage.

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Topologically Nontrivial Phase-Change Compound GeSbTe.

ACS Nano

July 2020

Department of Physical Sciences, Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan.

Chalcogenide phase-change materials show strikingly contrasting optical and electrical properties, which has led to their extensive implementation in various memory devices. By performing spin-, time-, and angle-resolved photoemission spectroscopy combined with the first-principles calculation, we report the experimental results that the crystalline phase of GeSbTe is topologically nontrivial in the vicinity of the Dirac semimetal phase. The resulting linearly dispersive bulk Dirac-like bands that cross the Fermi level and are thus responsible for conductivity in the stable crystalline phase of GeSbTe can be viewed as a 3D analogue of graphene.

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Ferromagnetic materials are the widely used source of spin-polarized electrons in spintronic devices, which are controlled by external magnetic fields or spin-transfer torque methods. However, with increasing demand for smaller and faster spintronic components utilization of spin-orbit phenomena provides promising alternatives. New materials with unique spin textures are highly desirable since all-electric creation and control of spin polarization is expected where the strength, as well as an arbitrary orientation of the polarization, can be defined without the use of a magnetic field.

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Proposal for Plasmon Spectroscopy of Fluctuations in Low-Dimensional Superconductors.

Phys Rev Lett

May 2020

Center for Theoretical Physics of Complex Systems, Institute for Basic Science (IBS), Daejeon 34126, Korea.

We propose to employ an optical spectroscopy technique to monitor the superconductivity and properties of superconductors in the fluctuating regime. This technique is operational close to the plasmon resonance frequency of the material, and it intimately connects with the superconducting fluctuations slightly above the critical temperature T_{c}. We find the Aslamazov-Larkin corrections to ac linear and dc nonlinear electric currents in a generic two-dimensional superconductor exposed to an external longitudinal electromagnetic field.

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Shubnikov de Haas resistance oscillations of highly mobile two dimensional helical electrons propagating on a conducting surface of strained HgTe 3D topological insulator are studied in magnetic fields B tilted by angle θ from the normal to the conducting layer. Strong decrease of oscillation amplitude A is observed with the tilt: [Formula: see text], where ξ is a constant. Evolution of the oscillations with temperature T shows that the parameter [Formula: see text] contains two terms: [Formula: see text].

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Optical Transistor for Amplification of Radiation in a Broadband Terahertz Domain.

Phys Rev Lett

February 2020

Center for Theoretical Physics of Complex Systems, Institute for Basic Science (IBS), Daejeon 34126, Korea.

We propose a new type of optical transistor for a broadband amplification of terahertz radiation. It is made of a graphene-superconductor hybrid, where electrons and Cooper pairs couple by Coulomb forces. The transistor operates via the propagation of surface plasmons in both layers, and the origin of amplification is the quantum capacitance of graphene.

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Suppression of superconductivity in disordered systems is a fundamental problem of condensed matter physics. Here we investigate superconducting niobium-titanium-nitride (NbTiN) thin films grown by the atomic layer deposition (ALD) with slightly different growth process parameters. We observe a smooth crossover from the disorder-driven superconductor-normal metal transition (SMT) to the superconductor-insulator transition (SIT) via the intermediate Bose metal state detected by the low-temperature saturation of the temperature dependence of the sheet resistance.

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In this work we present the novel atomic models of the (1 1 0)-(16 × 2), (1 1 0)-(8 × 10), (1 1 0)-(5 × 8) and (17 15 1)-(2 × 1) silicon surface reconstructions. The models are also valid for respective germanium surfaces. The dataset reports atomic coordinates for each surface reconstruction and related calculated bias-dependent scanning tunneling microscopy (STM) images.

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Unconventional Bloch-Grüneisen Scattering in Hybrid Bose-Fermi Systems.

Phys Rev Lett

August 2019

Center for Theoretical Physics of Complex Systems, Institute for Basic Science (IBS), Daejeon 34126, Korea.

We report on the novel mechanism of electron scattering in hybrid Bose-Fermi systems consisting of a two-dimensional electron gas in the vicinity of an exciton condensate: We show that in certain ranges of temperatures, the bogolon-pair-mediated scattering proves to be dominating over the conventional acoustic phonon channel, over the single-bogolon scattering, and over the scattering on impurities. We develop a microscopic theory of this effect, focusing on GaAs and MoS_{2} materials, and we find the principal temperature dependence of resistivity, distinct from the conventional phonon-mediated processes. Further, we scrutinize parameters and suggest a way to design composite samples with predefined electron mobilities, and we propose a mechanism of electron pairing for superconductivity.

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A new kind of magnetically-doped antiferromagnetic (AFM) topological insulators (TIs) with stoichiometry BiGdSbTe has been studied by angle-resolved photoemission spectroscopy (ARPES), superconducting magnetometry (SQUID) and X-ray magnetic circular dichroism (XMCD) with analysis of its electronic structure and surface-derived magnetic properties at different temperatures. This TI is characterized by the location of the Dirac gap at the Fermi level (E) and a bulk AFM coupling below the Neel temperature (4-8 K). At temperatures higher than the bulk AFM/PM transition, a surface magnetic layer is proposed to develop, where the coupling between the magnetic moments located at magnetic impurities (Gd) is mediated by the Topological Surface State (TSS) via surface Dirac-fermion-mediated magnetic coupling.

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