Infrared photoresponse of GeSiSn p-i-n photodiodes based on quantum dots, quantum wells, pseudomorphic and relaxed layers.

Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both on Si and silicon-on-insulator (SOI) substrates were investigated. Elastic strained state of grown films was demonstrated by x-ray diffractometry. Annealing of p-i-n structures before the mesa fabrication can improve the ideality factor of current-voltage characteristics.

Infrared photoresponse of GeSiSn p-i-n photodiodes based on quantum dots, quantum wells, pseudomorphic and relaxed layers.

Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both on Si and silicon-on-insulator (SOI) substrates were investigated. Elastic strained state of grown films was demonstrated by x-ray diffractometry. Annealing of p-i-n structures before the mesa fabrication can improve the ideality factor of current-voltage characteristics.

Tunable non-integer high-harmonic generation in a topological insulator.

When intense lightwaves accelerate electrons through a solid, the emerging high-order harmonic (HH) radiation offers key insights into the material. Sub-optical-cycle dynamics-such as dynamical Bloch oscillations, quasiparticle collisions, valley pseudospin switching and heating of Dirac gases-leave fingerprints in the HH spectra of conventional solids. Topologically non-trivial matter with invariants that are robust against imperfections has been predicted to support unconventional HH generation.

Superconducting phase transitions in disordered NbTiN films.

Suppression of superconductivity in disordered systems is a fundamental problem of condensed matter physics. Here we investigate superconducting niobium-titanium-nitride (NbTiN) thin films grown by the atomic layer deposition (ALD) with slightly different growth process parameters. We observe a smooth crossover from the disorder-driven superconductor-normal metal transition (SMT) to the superconductor-insulator transition (SIT) via the intermediate Bose metal state detected by the low-temperature saturation of the temperature dependence of the sheet resistance.

Quantum contributions to the magnetoconductivity of critically disordered superconducting TiN films.

The onset of superconductivity in the presence of disorder is a fundamental problem of condensed matter physics. Here we investigate the magnetoconductance of disordered ([Formula: see text]) superconducting TiN films above the critical temperature T . We show that the magnetoconductivity of moderately disordered films with [Formula: see text] is in full agreement with the perturbative theory of quantum contributions to conductivity.

Dynamical instability of the electric transport in superconductors.

We develop a nonlinear theory of the electronic transport in superconductors in the framework of the time-dependent Ginzburg-Landau (TDGL) equation. We utilize self-consistent Gaussian approximation and reveal the conditions under which the current-voltage V(I) dependence (I-V characteristics) acquires an S-shape form leading to switching instabilities. We demonstrate that in two-dimensions the emergence of such an instability is a hallmark of the Berezinskii-Kosterlitz-Thouless (BKT) transition that we have detected by transport measurements of titanium nitride (TiN) films.

Charge Berezinskii-Kosterlitz-Thouless transition in superconducting NbTiN films.

Three decades after the prediction of charge-vortex duality in the critical vicinity of the two-dimensional superconductor-insulator transition (SIT), one of the fundamental implications of this duality-the charge Berezinskii-Kosterlitz-Thouless (BKT) transition that should occur on the insulating side of the SIT-has remained unobserved. The dual picture of the process points to the existence of a superinsulating state endowed with zero conductance at finite temperature. Here, we report the observation of the charge BKT transition on the insulating side of the SIT in 10 nm thick NbTiN films, identified by the BKT critical behavior of the temperature and magnetic field dependent resistance, and map out the magnetic-field dependence of the critical temperature of the charge BKT transition.

Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures.

The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%.

Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers.

The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the growth temperature of 150 °С have been obtained. The phase diagrams of the superstructure change during the epitaxial growth of Sn on Si and on Ge(100) have been built. Using the phase diagram data, it becomes possible to identify the Sn cover on the Si surface and to control the Sn segregation on the superstructure observed on the reflection high-energy electron diffraction (RHEED) pattern.

Reentrant Resistive Behavior and Dimensional Crossover in Disordered Superconducting TiN Films.

A reentrant temperature dependence of the normal state resistance often referred to as the N-shaped temperature dependence, is omnipresent in disordered superconductors - ranging from high-temperature cuprates to ultrathin superconducting films - that experience superconductor-to-insulator transition. Yet, despite the ubiquity of this phenomenon its origin still remains a subject of debate. Here we investigate strongly disordered superconducting TiN films and demonstrate universality of the reentrant behavior.

Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots.

This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quantum dots separated by thin 5 nm layers of Si in the intrinsic region. Two peaks are observed on the temperature dependences of conductance of the investigated heterostructures.

Gate-tunable electron interaction in high-κ dielectric films.

The two-dimensional (2D) logarithmic character of Coulomb interaction between charges and the resulting logarithmic confinement is a remarkable inherent property of high dielectric constant (high-κ) thin films with far reaching implications. Most and foremost, this is the charge Berezinskii-Kosterlitz-Thouless transition with the notable manifestation, low-temperature superinsulating topological phase. Here we show that the range of the confinement can be tuned by the external gate electrode and unravel a variety of electrostatic interactions in high-k films.

Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells.

This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 - x Cd x Te grown by molecular beam epitaxy. The structure contains a single quantum well Hg0.35Cd0.

Electronic transport in two-dimensional high dielectric constant nanosystems.

There has been remarkable recent progress in engineering high-dielectric constant two dimensional (2D) materials, which are being actively pursued for applications in nanoelectronics in capacitor and memory devices, energy storage, and high-frequency modulation in communication devices. Yet many of the unique properties of these systems are poorly understood and remain unexplored. Here we report a numerical study of hopping conductivity of the lateral network of capacitors, which models two-dimensional insulators, and demonstrate that 2D long-range Coulomb interactions lead to peculiar size effects.

Crystallization of amorphous Si nanoclusters in SiO(x) films using femtosecond laser pulse annealings.

The SiO(x) films of various stoichiometries deposited on Si substrates with the use of the co-sputtering from two separate Si and SiO2 targets were annealed by femtosecond laser pulses. Femtosecond laser treatments were applied for crystallization of amorphous silicon nanoclusters in the silicon-rich oxide films. The treatments were carried out with the use of Ti-Sapphire laser with wavelength 800 nm and pulse duration about 30 fs.

Tunable properties of few-layer graphene-N-methylpyrrolidone hybrid structures.

A few-layer graphene-based hybrid material with high thermal and chemical stability and reproducible and tunable electronic properties was fabricated by intercalation of N-methylpyrrolidone into a few-layer graphene combined with heat treatment. Depending on the process temperature, the obtained material could be produced with the following properties: a broad range of resistivity values (six to seven orders of magnitude) in combination with a high carrier mobility, a tunable band-gap (from 0 up to 3-4 eV) and sp² or sp³ hybridization of carbon atoms. The extremely strong step-like temperature dependence (within 10 °C) of its properties observed in the vicinity of two temperatures, 90 and 200 °C, seems to be important for various applications.

Quantum interferential Y-junction switch.

We report the observation of the Fermi energy controlled redirection of the ballistic electron flow in a three-terminal system based on a small (100 nm) triangular quantum dot defined in a two-dimensional electron gas (2DEG). Measurement shows strong large-scale sign-changing oscillations of the partial conductance coefficient difference G(21) - G(23) on the gate voltage in zero magnetic field. Simple formulas and numerical simulation show that the effect can be explained by quantum interference and is associated with weak asymmetry of the dot or inequality of the ports connecting the dot to the 2DEG reservoirs.

Compact interrogator for fiber optic Bragg sensors based on an acousto-optic filter formed by photonic crystal rows of air holes.

Fiber optic sensors are typically used with expensive tunable lasers or optical spectrum analyzers for wavelength interrogation. We propose to replace the tunable laser by a broadband optical source incorporated with a novel thin linewidth acousto-optic tunable filter. It utilizes optical beam expanders constituted by photonic crystal rows of air holes in LiNbO(3) waveguide.

Extremely high response of electrostatically exfoliated few layer graphene to ammonia adsorption.

Extremely high gas sensing properties of p-type few layer graphene flakes exfoliated from highly oriented pyrolytic graphite have been demonstrated. The current response to ammonia adsorption is strongly dependent on film thickness and is higher than that for graphene by 1-8 orders of magnitude. A maximal response was found for sample thickness ∼ 2 nm.