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Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition.
ACS Appl Mater Interfaces
September 2020
Department of Chemical and Materials Engineering, University of Alberta, 12th Floor - Donadeo Innovation Centre for Engineering (ICE), 9211-116 Street NW, Edmonton, Alberta, Canada T6G 1H9.
This work explores the applicability of atomic layer deposition (ALD) in producing highly oriented crystalline gallium oxide films on foreign substrates at low thermal budgets. The effects of substrate, deposition temperature, and annealing process on formation of crystalline gallium oxide are discussed. The GaO films exhibited a strong preferred orientation on the -plane sapphire substrate.
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