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Magnetotransport and ARPES studies of the topological insulators SbTe and BiTe grown by MOCVD on large-area Si substrates.
Sci Rep
March 2022
Institute for Microelectronics and Microsystems, CNR-IMM Unit of Agrate Brianza, Via C. Olivetti 2, 20864, Agrate Brianza, Italy.
Recently, the topological insulators (TIs) antimony telluride (SbTe) and bismuth telluride (BiTe) are attracting high interest for applications based on spin-charge interconversion mechanisms. Aiming to make a step toward the technology transfer, it is of major importance to achieve and investigate epitaxial quality-TIs on large area Si-based substrates. In view of that, we report here magnetotransport and angle-resolved photoemission spectroscopy (ARPES) studies on SbTe and BiTe thin films grown by metal organic chemical vapor deposition (MOCVD) on top of 4″ Si(111) substrates.
View Article and Find Full Text PDFAsymmetric Interfaces in Epitaxial Off-Stoichiometric FeSi/Ge/FeSi Hybrid Structures: Effect on Magnetic and Electric Transport Properties.
Nanomaterials (Basel)
December 2021
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia.
Three-layer iron-rich FeSi/Ge/FeSi (0.2 < < 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy.
View Article and Find Full Text PDFPrediction of orientation relationships and interface structures between α-, β-, γ-FeSi and Si phases.
Acta Crystallogr B Struct Sci Cryst Eng Mater
June 2020
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation.
A pure crystallogeometrical approach is proposed for predicting orientation relationships, habit planes and atomic structures of the interfaces between phases, which is applicable to systems of low-symmetry phases and epitaxial thin film growth. The suggested models are verified with the example of epitaxial growth of α-, γ- and β-FeSi silicide thin films on silicon substrates. The density of near-coincidence sites is shown to have a decisive role in the determination of epitaxial thin film orientation and explains the superior quality of β-FeSi thin grown on Si(111) over Si(001) substrates despite larger lattice misfits.
View Article and Find Full Text PDFOpen-Circuit Photovoltage Exceeding 950 mV with an 840 mV Average at SbS-Thianthrene Junctions Enabled by Thioperylene Anhydride Back Contacts.
ACS Omega
July 2020
Department of Chemistry and Biochemistry; Life Science and Bioengineering Center; Worcester Polytechnic Institute, 100 Institute Road, Worcester, Massachusetts 01609, United States.
Covalently attached perylene monolayers serve as back contacts for SbS photoelectrochemical cells with a thianthrene front, rectifying contact. Covalent attachment of perylenetetracarboxylic dianhydride, PTCDA, to Si(111) utilizes an anhydride-to-imide conversion at surface-attached amines. For SbS solar absorbers, we hypothesized that a terminal thioperylene anhydride, i.
View Article and Find Full Text PDFPhase-coherent transport in selectively grown topological insulator nanodots.
Nanotechnology
February 2019
Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany. JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Germany.
Oxidized Si(111) substrates were pre-structured by electron beam lithography and used as a substrate for the selective growth of three-dimensional topological insulators (TI) by molecular beam epitaxy. The patterned holes were filled up by the TI, i.e.
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