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Temperature Dependence of Intermolecular Dynamics and Liquid Properties of Deep Eutectic Solvent, Reline.
J Phys Chem B
January 2025
Chemical, Biological and Macromolecular Sciences, S. N. Bose National Centre for Basic Sciences, J. D. Block, Sec.III, Salt Lake, Kolkata, West Bengal 700 098, India.
We investigated the temperature dependence of the intermolecular dynamics, including intermolecular vibrations and collective orientational relaxation, of one of the most typical deep eutectic solvents, reline, using femtosecond Raman-induced Kerr effect spectroscopy (fs-RIKES), subpicosecond optical Kerr effect spectroscopy (ps-OKES), and molecular dynamics (MD) simulations. According to fs-RIKES results, the temperature-dependent intermolecular vibrational band peak at ∼90 cm exhibited a redshift with increasing temperature. The density-of-state (DOS) spectrum of reline by MD simulations reproduced this fs-RIKES spectral feature.
View Article and Find Full Text PDFHydration behavior of asparagine: an approach using time domain reflectometry at low temperatures.
J Biomol Struct Dyn
December 2024
School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded, Maharashtra, India.
The dielectric behavior of Asparagine (CHNO) in water over the frequency range of 10 MHz to 30 GHz in the temperature region of 278.15-303.15 K in a step of 5 K has been carried out using time domain reflectometry (TDR) at various concentrations of asparagine.
View Article and Find Full Text PDFCharge noise in low Schottky barrier multilayer tellurium field-effect transistors.
Nanoscale
January 2025
Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Sector III, Block JD, Salt Lake, Kolkata 700106, India.
Creating van der Waals (vdW) homojunction devices requires materials with narrow bandgaps and high carrier mobilities for bipolar transport, which are crucial for constructing fundamental building blocks like diodes and transistors in a 2D architecture. Following the recent discovery of elemental 2D tellurium, here, we systematically investigate the electrical transport and flicker noise of hydrothermally grown multilayer tellurium field effect transistors. While the devices exhibit a dominant p-type behavior with high hole mobilities up to ∼242 cm V s at room temperature and almost linear current-voltage characteristics down to 77 K, ambipolar behavior was observed in some cases.
View Article and Find Full Text PDFTerahertz Crystal-Field Transitions and Quasi Ferromagnetic Magnon Excitations in a Noncollinear Magnet for Hybrid Spin-Wave Computation.
ACS Appl Mater Interfaces
October 2024
Department of Physics, Indian Institute of Science Education and Research, Bhopal 462066, India.
The complexity of interactions between the crystal-field and unusual noncollinear spin arrangement in nontrivial magnets demands novel tools to unravel the mystery underneath. In this work, we study such interaction dynamics of crystal-field excitations (CFE) and low-energy magnetic excitations in orthochromite TmCrO with controls of temperature and magnetic field using high-resolution magneto-terahertz (THz) time-domain spectroscopy. The THz energy spectrum spanning 0.
View Article and Find Full Text PDFCharacterizing Defects Inside Hexagonal Boron Nitride Using Random Telegraph Signals in van der Waals 2D Transistors.
ACS Nano
October 2024
Electrical and Computer Engineering, New York University, Brooklyn, New York 11201, United States.
Single-crystal hexagonal boron nitride (hBN) is used extensively in many two-dimensional electronic and quantum devices, where defects significantly impact performance. Therefore, characterizing and engineering hBN defects are crucial for advancing these technologies. Here, we examine the capture and emission dynamics of defects in hBN by utilizing low-frequency noise (LFN) spectroscopy in hBN-encapsulated and graphene-contacted MoS field-effect transistors (FETs).
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