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Surface Atomic Arrangement of Aluminum Ultra-Thin Layers Grown on Si(111).
Nanomaterials (Basel)
March 2023
Centre of Physics of Minho and Porto Universities (CF-UM-PT), University of Minho, 4804-533 Guimarães, Portugal.
Surface atomic arrangement and physical properties of aluminum ultrathin layers on c-Si(111)-7 × 7 and hydrogen-terminated c-Si(111)-1 × 1 surfaces deposited using molecular beam epitaxy were investigated. X-ray photoelectron spectroscopy spectra were collected in two configurations (take-off angle of 0° and 45°) to precisely determine the surface species. Moreover, 3D atomic force microscopy (AFM) images of the air-exposed samples were acquired to investigate the clustering formations in film structure.
View Article and Find Full Text PDFExtreme enhancement of superconductivity in epitaxial aluminum near the monolayer limit.
Sci Adv
March 2023
Institute for Molecules and Materials, Radboud University, 6525 AJ Nijmegen, Netherlands.
BCS theory has been widely successful at describing elemental bulk superconductors. Yet, as the length scales of such superconductors approach the atomic limit, dimensionality as well as the environment of the superconductor can lead to drastically different and unpredictable superconducting behavior. Here, we report a threefold enhancement of the superconducting critical temperature and gap size in ultrathin epitaxial Al films on Si(111), when approaching the 2D limit, based on high-resolution scanning tunneling microscopy/spectroscopy (STM/STS) measurements.
View Article and Find Full Text PDFStructural, Morphological, Electronic Structural, Optical, and Magnetic Properties of ZnO Nanostructures.
Materials (Basel)
December 2022
Department of Physics, College of Science, King Faisal University, P.O. Box 400, Al-Ahsa 31982, Saudi Arabia.
ZnO nanostructures were grown on a Si(111) substrate using a vapor-liquid-solid (VLS) growth procedure (pristine ZnO) and annealed via a rapid thermal-annealing process in an argon atmosphere at 1100 °C (Ar-ZnO). The synthesized ZnO nanostructures were investigated through structural, electronic structural, morphological, optical, and magnetic characterizations. X-ray diffraction and selective area electron diffraction (SAED) measurements revealed that both samples exhibited the hexagonal wurtzite phase of nanocrystalline ZnO.
View Article and Find Full Text PDFComparison of the Material Quality of AlInN (x-0-0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering.
Materials (Basel)
October 2022
Photonics Engineering Group, Electronics Department, University of Alcalá, Madrid-Barcelona Road km 33.6, 28871 Alcalá de Henares, Spain.
AlInN ternary semiconductors have attracted much interest for application in photovoltaic devices. Here, we compare the material quality of AlInN layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To modulate their Al content, the Al RF power was varied from 0 to 225 W, whereas the In RF power and deposition temperature were fixed at 30 W and 300 °C, respectively.
View Article and Find Full Text PDFAlGaN Quantum Disk Nanorods with Efficient UV-B Emission Grown on Si(111) Using Molecular Beam Epitaxy.
Nanomaterials (Basel)
July 2022
Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China.
AlGaN nanorods have attracted increasing amounts of attention for use in ultraviolet (UV) optoelectronic devices. Here, self-assembled AlGaN nanorods with embedding quantum disks (Qdisks) were grown on Si(111) using plasma-assisted molecular beam epitaxy (PA-MBE). The morphology and quantum construction of the nanorods were investigated and well-oriented and nearly defect-free nanorods were shown to have a high density of about 2 × 10 cm.
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