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Unveiling a Tunable Moiré Bandgap in Bilayer Graphene/hBN Device by Angle-Resolved Photoemission Spectroscopy.
Adv Sci (Weinh)
January 2025
School of Physical Science and Technology, ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 201210, P. R. China.
Over the years, great efforts have been devoted in introducing a sizable and tunable band gap in graphene for its potential application in next-generation electronic devices. The primary challenge in modulating this gap has been the absence of a direct method for observing changes of the band gap in momentum space. In this study, advanced spatial- and angle-resolved photoemission spectroscopy technique is employed to directly visualize the gap formation in bilayer graphene, modulated by both displacement fields and moiré potentials.
View Article and Find Full Text PDFProbing and manipulating the Mexican hat-shaped valence band of InSe.
Nat Commun
January 2025
School of Physics and Astronomy, University of Nottingham, Nottingham, UK.
Ferroelectrics based on van der Waals semiconductors represent an emergent class of materials for disruptive technologies ranging from neuromorphic computing to low-power electronics. However, many theoretical predictions of their electronic properties have yet to be confirmed experimentally and exploited. Here, we use nanoscale angle-resolved photoemission electron spectroscopy and optical transmission in high magnetic fields to reveal the electronic band structure of the van der Waals ferroelectric indium selenide (α-InSe).
View Article and Find Full Text PDFElectronic structure of superconducting infinite-layer lanthanum nickelates.
Sci Adv
January 2025
National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China.
Revealing the momentum-resolved electronic structure of infinite-layer nickelates is essential for understanding this class of unconventional superconductors but has been hindered by the formidable challenges in improving the sample quality. In this work, we report the angle-resolved photoemission spectroscopy of superconducting LaSrNiO films prepared by molecular beam epitaxy and in situ atomic-hydrogen reduction. The measured Fermi topology closely matches theoretical calculations, showing a large Ni [Formula: see text]-derived Fermi sheet that evolves from hole-like to electron-like along and a three-dimensional (3D) electron pocket centered at the Brillouin zone corner.
View Article and Find Full Text PDFRole of spin-orbit coupling for the band splitting in ⍺-Sb and ⍺-Bi on SiC(0001).
J Phys Condens Matter
January 2025
AIMR, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai, 980-8578, JAPAN.
Monolayer atomic thin films of group-V elements have a high potential for application in spintronics and valleytronics because of their unique crystal structure and strong spin-orbit coupling. We fabricated Sb and Bi monolayers on a SiC(0001) substrate by the molecular-beam-epitaxy method and studied the electronic structure by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. The fabricated Sb film shows the (√3×√3)R30º superstructure associated with the formation of ⍺-Sb, and exhibits a semiconducting nature with a band gap of more than 1.
View Article and Find Full Text PDFRole of spin-orbit coupling for the band splitting in ⍺-Sb and ⍺-Bi on SiC(0001).
J Phys Condens Matter
January 2025
AIMR, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai, 980-8578, JAPAN.
Monolayer atomic thin films of group-V elements have a high potential for application in spintronics and valleytronics because of their unique crystal structure and strong spin-orbit coupling. We fabricated Sb and Bi monolayers on a SiC(0001) substrate by the molecular-beam-epitaxy method and studied the electronic structure by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. The fabricated Sb film shows the (√3×√3)R30º superstructure associated with the formation of ⍺-Sb, and exhibits a semiconducting nature with a band gap of more than 1.
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