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Abundant Acceptor Emission from Nitrogen-Doped ZnO Films Prepared by Atomic Layer Deposition under Oxygen-Rich Conditions.
ACS Appl Mater Interfaces
August 2017
Institute of Physics, Polish Academy of Sciences , Al. Lotników 32/46, PL-02668 Warsaw, Poland.
Nitrogen-doped and undoped ZnO films were grown by thermal atomic layer deposition (ALD) under oxygen-rich conditions. Low-temperature photoluminescence spectra reveal a dominant donor-related emission at 3.36 eV and characteristic acceptor-related emissions at 3.
View Article and Find Full Text PDF[Optical Properties Investigation of p-Type ZnO Film Based on Doping by Diffusion].
Guang Pu Xue Yu Guang Pu Fen Xi
July 2015
The main purpose of this paper is to investigate the optical properties of p-type ZnO film based on P doping. ZnO film was grown by Atomic layer deposition (ALD) on InP subsrate in this experiment, and phosphorus diffused into ZnO lattice by annealing treatment at different temperature (500, 700 ⁰C). The optical properties of samples were investigated by photoluminescence (PL) spectroscopy, which indicated that the annealing temperature is the important factor influencing the phosphorus diffusion doping.
View Article and Find Full Text PDFRoom-temperature violet luminescence and ultraviolet photodetection of Sb-doped ZnO/Al-doped ZnO homojunction array.
Nanoscale Res Lett
July 2013
Department of Physics, National Taiwan University, Taipei 106, Taiwan.
A Sb-doped ZnO microrod array was fabricated on an Al-doped ZnO thin film by electrodeposition. Strong violet luminescence, originated from free electron-to-acceptor level transitions, was identified by temperature-dependent photoluminescence measurements. This acceptor-related transition was attributed to substitution of Sb dopants for Zn sites, instead of O sites, to form a complex with two Zn vacancies (VZn), the SbZn-2VZn complex.
View Article and Find Full Text PDFHigh optical quality single crystal phase wurtzite and zincblende InP nanowires.
Nanotechnology
March 2013
Eindhoven University of Technology, Eindhoven, The Netherlands.
We report single crystal phase and non-tapered wurtzite (WZ) and zincblende twinning superlattice (ZB TSL) InP nanowires (NWs). The NWs are grown in a metalorganic vapor phase epitaxy (MOVPE) reactor using the vapor-liquid-solid (VLS) mechanism and in situ etching with HCl at a high growth temperature. Our stacking fault-free WZ and ZB TSL NWs allow access to the fundamental properties of both NW crystal structures, whose optical and electronic behaviors are often screened by polytypism or incorporated impurities.
View Article and Find Full Text PDFPositron annihilation lifetime and photoluminescence studies on single crystalline ZnO.
J Phys Condens Matter
April 2011
Department of Physics, Bangabasi Morning College, 19 Rajkumar Chakraborty Sarani, Kolkata 700009, India.
The room temperature positron annihilation lifetime for single crystalline ZnO has been measured as 164 ± 1 ps. The single component lifetime value is very close to but higher than the theoretically predicted value of ~154 ps. Photoluminescence study (at 10 K) indicates the presence of hydrogen and other defects, mainly acceptor related, in the crystal.
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