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http://dx.doi.org/10.1103/physrevb.41.12619 | DOI Listing |
J Phys Chem C Nanomater Interfaces
January 2025
Institute of Physics, NAWI Graz, University of Graz, Universitätsplatz 5, 8010 Graz, Austria.
For weakly interacting adsorbate/substrate systems, the integer charge transfer (ICT) model describes how charge transfer across interfaces depends on the substrate work function. In particular, work function regimes where no charge transfer occurs (vacuum level alignment) can be distinguished from regions where integer charge transfer by electron tunneling from substrate to adsorbate or vice versa takes place (Fermi level pinning). While the formation of singly integer charged molecular anions and cations of organic semiconductors on various substrates has been well described by this model, the double integer charging regime has so far remained unexplored and experimentally elusive.
View Article and Find Full Text PDFNanoscale
January 2025
Physics Department E20, School of Natural Sciences, Technical University of Munich, Garching, 85748, Germany.
-Armchair graphene nanoribbons (nAGNRs) are promising components for next-generation nanoelectronics due to their controllable band gap, which depends on their width and edge structure. Using non-metal surfaces for fabricating nAGNRs gives access to reliable information on their electronic properties. We investigated the influence of light and iron adatoms on the debromination of 4,4''-dibromo--terphenyl precursors affording poly(-phenylene) (PPP as the narrowest GNR) wires through the Ullmann coupling reaction on a rutile TiO(110) surface, which we studied by scanning tunneling microscopy and X-ray photoemission spectroscopy.
View Article and Find Full Text PDFNano Lett
January 2025
Department of Quantum Matter Physics, University of Geneva, 24, Quai Ernest-Ansermet, 1211 Geneva 4, Switzerland.
Tunable electronic properties in transition metal dichalcogenides (TMDs) are essential to further their use in device applications. Here, we present a comprehensive scanning tunneling microscopy and spectroscopy study of a doping-induced charge density wave (CDW) in semiconducting bulk 1T-ZrSe. We find that atomic impurities that locally shift the Fermi level () into the conduction band trigger a CDW reconstruction concomitantly to the opening of a gap at .
View Article and Find Full Text PDFAdv Sci (Weinh)
January 2025
Department of Physics, University of Ulsan, Ulsan, 44610, Republic of Korea.
The anisotropic properties of materials profoundly influence their electronic, magnetic, optical, and mechanical behaviors and are critical for a wide range of applications. In this study, the anisotropic characteristics of Ni-based van der Waals materials, specifically NiTe and its alloy NiTeSe, utilizing a combination of comprehensive scanning tunneling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations, are explored. Unlike 1T-NiTe, which exhibits trigonal in-plane symmetry, the substitution of Te with Se in NiTe (resulting in the NiTeSe alloy) induces a pronounced in-plane anisotropy.
View Article and Find Full Text PDFPhys Rev Lett
December 2024
School of Physics, Beihang University, Haidian District, Beijing 100191, China.
Massive Dirac fermions, which are essential for realizing novel topological phenomena, are expected to be generated from massless Dirac fermions by breaking the related symmetry, such as time-reversal symmetry in topological insulators or crystal symmetry in topological crystalline insulators. Here, we report scanning tunneling microscopy and angle-resolved photoemission spectroscopy studies of α-Bi_{4}I_{4}, which reveals the realization of massive Dirac fermions in the (100) surface states without breaking the time-reversal symmetry. Combined with first-principles calculations, our experimental results indicate that the spontaneous symmetry breaking engenders two nondegenerate edge states at the opposite sides of monolayer Bi_{4}I_{4} after the structural phase transition, imparting mass to the Dirac fermions after taking the interlayer coupling into account.
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