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High Gain, Low Voltage Solar-Blind Deep UV Photodetector Based on GaO/(AlGa)O/GaN nBp Heterojunction.
Small
January 2025
Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China.
In this study an (AlGa)O barrier layer is inserted between β-GaO and GaN in a p-GaN/n-GaO diode photodetector, causing the dark current to decrease considerably, and device performance to improve significantly. The β-GaO/β-(AlGa)O/GaN n-type/Barrier/p-type photodetector achieves a photocurrent gain of 1246, responsivity of 237 A W, and specific detectivity of 5.23 × 10 cm Hz W under a bias of -20 V.
View Article and Find Full Text PDFTwo-Dimensional Phototransistors with van der Waals Superstructure Contacts for High-Performance Photosensing.
ACS Appl Mater Interfaces
January 2025
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
Semiconducting transition metal dichalcogenides (TMDs) possess exceptional photoelectronic properties, rendering them excellent channel materials for phototransistors and holding great promise for future optoelectronics. However, the attainment of high-performance photodetection has been impeded by challenges pertaining to electrical contact. To surmount this obstacle, we introduce a phototransistor architecture, in which the WS channel is connected with an alternating WS-WSe strip superstructure, strategically positioned alongside the source and drain contact regions.
View Article and Find Full Text PDFLight-Mediated Multilevel Neuromorphic Switching in a Hybrid Organic-Inorganic Memristor.
ACS Omega
December 2024
School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, U.K.
Article Synopsis
- New optoelectronic devices are emerging from the use of memristors that can be modulated with light, benefiting fields like computer vision and artificial intelligence.
- The study features memristors made from a hybrid material of zinc oxide nanorods and PMMA, which do not need a forming step and show effective electronic switching.
- These devices can switch with UV light and demonstrate notable memory capabilities, enabling applications in neural networks and neuromorphic computing due to their unique photonic synaptic functions.
Endurable IGZO/SnS/IGZO Heterojunction Phototransistor Arrays for Image Sensors.
ACS Appl Mater Interfaces
January 2025
School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
Optoelectronic devices require stable operation to detect repetitive visual information. In this study, endurable arrays based on heterojunction phototransistors composed of indium-gallium-zinc oxide (IGZO) with a low dark current and tin sulfide (SnS) capable of absorbing visible light are developed for image sensors. The tandem structure of IGZO/SnS/IGZO (ISI) enables stable operation under repetitive exposure to visible light by improving the transport ability of the photoexcited carriers through mitigated trap sites and their separation into each IGZO layer.
View Article and Find Full Text PDFAtomic-Scale Interface Modification in Complex Oxide Heterojunctions for Near-Infrared Photodetection.
ACS Nano
December 2024
Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea.
Photodetectors that detect near-infrared (NIR) light serve as important components in contemporary energy-efficient optoelectronic devices. However, detecting the low-energy photons of the NIR light has long been challenging since the ease of photoexcitation inevitably involves increasing the background current in the dark. Herein, we report the atomic-scale interface modification in SrRuO/LaAlO/Nb-doped SrTiO (SRO/LAO/Nb:STO) heterostructures for NIR photodetection.
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