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Depinning of charge density waves of different dimensionalities in 1-TiSeand NbSe.
J Phys Condens Matter
September 2024
School of Physical Science and Technology, Soochow University, Suzhou 215006, People's Republic of China.
Nonlinear transport behavior is one of the signatures of the formation of electronic crystals such as charge density wave (CDW), as it provides evidence for their collective motion. Such experimental evidence has been widely reported in quasi-one-dimensional (1D) materials but is rarely studied in 2D systems. Only a few studies on the RTematerials have been previsouly reported.
View Article and Find Full Text PDFExceptionally Slow, Long-Range, and Non-Gaussian Critical Fluctuations Dominate the Charge Density Wave Transition.
Phys Rev Lett
June 2024
School of Physical Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India.
(TaSe_{4})_{2}I is a well-studied quasi-one-dimensional compound long-known to have a charge-density wave (CDW) transition around 263 K. We argue that the critical fluctuations of the pinned CDW order parameter near the transition can be inferred from the resistance noise on account of their coupling to the dissipative normal carriers. Remarkably, the critical fluctuations of the CDW order parameter are slow enough to survive the thermodynamic limit and dominate the low-frequency resistance noise.
View Article and Find Full Text PDFCharge-Density-Wave Thin-Film Devices Printed with Chemically Exfoliated 1T-TaS Ink.
ACS Nano
April 2022
Nano-Device Laboratory and Phonon Optimized Engineered Materials Center, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States.
We report on the preparation of inks containing fillers derived from quasi-two-dimensional charge-density-wave materials, their application for inkjet printing, and the evaluation of their electronic properties in printed thin-film form. The inks were prepared by liquid-phase exfoliation of CVT-grown 1T-TaS crystals to produce fillers with nm-scale thickness and μm-scale lateral dimensions. Exfoliated 1T-TaS was dispersed in a mixture of isopropyl alcohol and ethylene glycol to allow fine-tuning of filler particles thermophysical properties for inkjet printing.
View Article and Find Full Text PDFAtomic-Resolution Cryogenic Scanning Transmission Electron Microscopy for Quantum Materials.
Acc Chem Res
September 2021
Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853, United States.
ConspectusThe rich physics permeating the phase diagrams of quantum materials have commanded the attention of the solid-state chemistry, materials science, and condensed-matter physics communities, sparking immense research into quantum phase transitions including superconducting, ferroic, and charge-order transitions. Many of these transitions occur at low temperatures and involve electronic, magnetic, or lattice order, which emerges on the atomic to mesoscopic scales. The complex interplay of these states and the heterogeneity that arises due to competition and intertwining of phases, however, is not fully understood and requires probes that capture ordering over multiple length scales down to the local atomic symmetries.
View Article and Find Full Text PDFBias-Voltage Driven Switching of the Charge-Density-Wave and Normal Metallic Phases in 1T-TaS Thin-Film Devices.
ACS Nano
June 2019
Department of Chemistry , University of Georgia, Athens , Georgia 30602 , United States.
Article Synopsis
- The study examines the switching between different charge-density-wave phases in thin-film 1T-TaS devices using in-plane bias voltage, successfully achieving transitions across a broad temperature range.
- Low-frequency electronic noise spectroscopy is highlighted as an effective method for monitoring these phase transitions, particularly from the incommensurate phase to a normal metal state, with sharp noise increases linked to changes in resistivity.
- The findings suggest Joule heating is the main factor driving these voltage-induced transitions, and the ability to switch among multiple phases holds promise for future nanoscale device applications while showcasing noise spectroscopy's utility in studying phase transitions.
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