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Doping Tunable CDW Phase Transition in Bulk 1T-ZrSe.
Nano Lett
January 2025
Department of Quantum Matter Physics, University of Geneva, 24, Quai Ernest-Ansermet, 1211 Geneva 4, Switzerland.
Tunable electronic properties in transition metal dichalcogenides (TMDs) are essential to further their use in device applications. Here, we present a comprehensive scanning tunneling microscopy and spectroscopy study of a doping-induced charge density wave (CDW) in semiconducting bulk 1T-ZrSe. We find that atomic impurities that locally shift the Fermi level () into the conduction band trigger a CDW reconstruction concomitantly to the opening of a gap at .
View Article and Find Full Text PDFPhotoemission Study of GaN Passivation Layers and Band Alignment at GaInP(100) Heterointerfaces.
ACS Appl Mater Interfaces
January 2025
Grundlagen von Energiematerialien, Institut für Physik, Technische Universität Ilmenau, 98693 Ilmenau, Germany.
To date, III-V semiconductor-based tandem devices with GaInP top photoabsorbers show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. In photoelectrochemical (PEC) cells, however, III-V semiconductors are sensitive, in terms of photochemical stability and, therefore, require suitable functional layers for electronic and chemical passivation. GaN films are discussed as promising options for this purpose.
View Article and Find Full Text PDFIn-Plane Anisotropy in van der Waals NiTeSe Ternary Alloy.
Adv Sci (Weinh)
January 2025
Department of Physics, University of Ulsan, Ulsan, 44610, Republic of Korea.
The anisotropic properties of materials profoundly influence their electronic, magnetic, optical, and mechanical behaviors and are critical for a wide range of applications. In this study, the anisotropic characteristics of Ni-based van der Waals materials, specifically NiTe and its alloy NiTeSe, utilizing a combination of comprehensive scanning tunneling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations, are explored. Unlike 1T-NiTe, which exhibits trigonal in-plane symmetry, the substitution of Te with Se in NiTe (resulting in the NiTeSe alloy) induces a pronounced in-plane anisotropy.
View Article and Find Full Text PDFInfluence of Photoemission Geometry on Timing and Efficiency in 4D Ultrafast Electron Microscopy.
Chemphyschem
January 2025
University of Minnesota Twin Cities, Chemical Engineering and Materials Science, 421 Washington Avenue SE, 55455, Minneapolis, UNITED STATES OF AMERICA.
Broader adoption of 4D ultrafast electron microscopy (UEM) for the study of chemical, materials, and quantum systems is being driven by development of new instruments as well as continuous improvement and characterization of existing technologies. Perhaps owing to the still-high barrier to entry, the full range of capabilities of laser-driven 4D UEM instruments has yet to be established, particularly when operated at extremely low beam currents (~fA). Accordingly, with an eye on beam stability, we have conducted particle tracing simulations of unconventional off-axis photoemission geometries in a UEM equipped with a thermionic-emission gun.
View Article and Find Full Text PDFHigh-throughput evaluation of half-metallicity of CoMnSi Heusler alloys using composition-spread films and spin-integrated hard X-ray photoelectron spectroscopy.
Sci Technol Adv Mater
January 2025
Magnetic Functional Device Group, Research Center for Magnetic and Spintronic Materials (CMSM), National Institute for Materials Science (NIMS), Tsukuba, Japan.
We demonstrate high-throughput evaluation of the half-metallicity of CoMnSi Heusler alloys by spin-integrated hard X-ray photoelectron spectroscopy (HAXPES) of composition-spread films performed with high-brilliance synchrotron radiation at NanoTerasu, which identifies the optimum composition showing the best half-metallicity. Co Mn Si composition-spread thin films for = 10-40% with a thickness of 30 nm are fabricated on MgO(100) substrates using combinatorial sputtering technique. The 2-ordering and (001)-oriented epitaxial growth of CoMnSi are confirmed by X-ray diffraction for = 18-40%.
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