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Ultrathin MWCNT/TiCT Hybrid Films for Electromagnetic Interference Shielding.
Nanomaterials (Basel)
December 2024
National Key Laboratory of Scattering and Radiation, Beijing 100854, China.
The disordered assembly and low conductivity of carbon nanotubes are the main problems that limit the application of electromagnetic interference (EMI) shielding. In this work, an ordered lamellar assembly structure of multiwalled carbon nanotube/TiCT (MWCNT/TiCT) hybrid films was achieved by vacuum-assisted filtration through the hybridization of TiCT nanosheets and carbon nanotubes, where carbon nanotubes were tightly sticking on the surface of TiCT nanosheets via physical adsorption and hydrogen bonding. Compared with the pure carbon nanotubes films, the hybrid MWCNT/TiCT films achieved a significant improvement in conductivity of 452.
View Article and Find Full Text PDFStabilizing Schottky-to-Ohmic Switching in HfO-Based Ferroelectric Films via Electrode Design.
Adv Sci (Weinh)
January 2025
Department of Materials Science and Metallurgy, University of Cambridge, CB3 0FS, Cambridge, UK.
The discovery of ferroelectric phases in HfO-based films has reignited interest in ferroelectrics and their application in resistive switching (RS) devices. This study investigates the pivotal role of electrodes in facilitating the Schottky-to-Ohmic transition (SOT) observed in devices consisting of ultrathin epitaxial ferroelectric HfYO (YHO) films deposited on LaSrMnO-buffered Nb-doped SrTiO (NbSTO|LSMO) with Ti|Au top electrodes. These findings indicate combined filamentary RS and ferroelectric switching occurs in devices with designed electrodes, having an ON/OFF ratio of over 100 during about 10 cycles.
View Article and Find Full Text PDFImproving the Thermal Stability of Indium Oxide n-Type Field-Effect Transistors by Enhancing Crystallinity through Ultrahigh-Temperature Rapid Thermal Annealing.
ACS Appl Mater Interfaces
January 2025
Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
Ultrathin indium oxide films show great potential as channel materials of complementary metal oxide semiconductor back-end-of-line transistors due to their high carrier mobility, smooth surface, and low leakage current. However, it has severe thermal stability problems (unstable and negative threshold voltage shifts at high temperatures). In this paper, we clarified how the improved crystallinity of indium oxide by using ultrahigh-temperature rapid thermal O annealing could reduce donor-like defects and suppress thermal-induced defects, drastically enhancing thermal stability.
View Article and Find Full Text PDFAnchorable Polymers Enabling Ultra-Thin and Robust Hole-Transporting Layers for High-Efficiency Inverted Perovskite Solar Cells.
Angew Chem Int Ed Engl
January 2025
Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, Shanghai Key Laboratory of Functional Materials Chemistry, Feringa Nobel Prize Scientist Joint Research Center, Frontiers Science Center for Materiobiology and Dynamic Chemistry, Institute of Fine Chemicals, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai, China.
Currently, the development of polymeric hole-transporting materials (HTMs) lags behind that of small-molecule HTMs in inverted perovskite solar cells (PSCs). A critical challenge is that conventional polymeric HTMs are incapable of forming ultra-thin and conformal coatings like self-assembly monolayers (SAMs), especially for substrates with rough surface morphology. Herein, we address this challenge by designing anchorable polymeric HTMs (CP1 to CP5).
View Article and Find Full Text PDFMachine learning assisted plasmonic metascreen for enhanced broadband absorption in ultra-thin silicon films.
Light Sci Appl
January 2025
Division of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
We propose and demonstrate a data-driven plasmonic metascreen that efficiently absorbs incident light over a wide spectral range in an ultra-thin silicon film. By embedding a double-nanoring silver array within a 20 nm ultrathin amorphous silicon (a-Si) layer, we achieve a significant enhancement of light absorption. This enhancement arises from the interaction between the resonant cavity modes and localized plasmonic modes, requiring precise tuning of plasmon resonances to match the absorption region of the silicon active layer.
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