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Nanoscale Structure and Interfacial Electrochemical Reactivity of Moiré-Engineered Atomic Layers.
Acc Chem Res
January 2025
Department of Chemistry, University of California, Berkeley, California 94720, United States.
ConspectusThe electronic properties of atomically thin van der Waals (vdW) materials can be precisely manipulated by vertically stacking them with a controlled offset (for example, a rotational offset─i.e., twist─between the layers, or a small difference in lattice constant) to generate moiré superlattices.
View Article and Find Full Text PDFDesign of an Atomic Layer-Deposited InO/GaO Channel Structure for High-Performance Thin-Film Transistors.
ACS Appl Mater Interfaces
January 2025
Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea.
For potential application in advanced memory devices such as dynamic random-access memory (DRAM) or NAND flash, nanolaminated indium oxide (In-O) and gallium oxide (Ga-O) films with five different vertical cation distributions were grown and investigated by using a plasma-enhanced atomic layer deposition (PEALD) process. Specifically, this study provides an in-depth examination of how the control of individual layer thicknesses in the nanolaminated (NL) IGO structure impacts not only the physical and chemical properties of the thin film but also the overall device performance. To eliminate the influence of the cation composition ratio and overall thickness on the IGO thin film, these parameters were held constant across all conditions.
View Article and Find Full Text PDFTe-Regulated Black Arsenic Phosphorus Monocrystalline Film with Excellent Uniformity for High Performance Photodetection.
J Phys Chem Lett
January 2025
School of Metallurgy and Environment, Central South University, Changsha 410083, China.
Two-dimensional (2D) black arsenic phosphorus (b-AsP) material has been attracting considerable attention for its extraordinary properties. However, its application in large-scale device fabrication remains challenging due to the limited scale and irregular shape. Here, we found the special effect of Te upon growth of b-AsP and developed a novel Te-regulated steady growth (Te-SG) strategy to obtain high-quality b-AsP single crystal.
View Article and Find Full Text PDFMitigating triplet loss in 2D WSe/non-fullerene heterostructures using halogenated acceptors.
Mater Horiz
January 2025
Institute of Physics and Astronomy, University of Potsdam, Karl-Liebknecht-Straße 24/25, 14476, Germany.
Two-dimensional transition metal dichalcogenides (2D TMDCs) can be combined with organic semiconductors to form hybrid van der Waals heterostructures. Specially, non-fullerene acceptors (NFAs) stand out due to their excellent absorption and exciton diffusion properties. Here, we couple monolayer tungsten diselenide (ML-WSe) with two well performing NFAs, ITIC, and IT-4F (fluorinated ITIC) to achieve hybrid architectures.
View Article and Find Full Text PDFInfluence of CTAB Reverse Micellar Confinement on the Tetrahedral Structure of Liquid Water.
J Phys Chem B
January 2025
Department of Computational Sciences, School of Basic Sciences, Central University of Punjab, Bathinda 151401, India.
The effect of confinement on the tetrahedral ordering of liquid water plays a vital role in controlling their microscopic structure and dynamics as well as their spectroscopic properties. In this article, we have performed the classical molecular dynamics simulations of four different CTAB/water/chloroform reverse micelles with varied water content to study how the tetrahedral ordering of nanoscale water inside reverse micellar confinement influences the microscopic dynamics and the structural relaxation of water···water hydrogen bonds and its impact on the low-frequency intermolecular vibrational bands. We have noticed from the results obtained from simulated trajectories the lowering trends of tetrahedral ordering of water pools in reverse micellar confinements as we move from bulk to confined and strictly confined environments.
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