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Self-absorption effect in soft X-ray emission spectra utilized for bandgap evaluation of semiconductors.
Microscopy (Oxf)
January 2025
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan.
The self-absorption effects observed in the background intensity just above the Si L-emission spectra of Si and β-Si3N4, and the C K-emission spectra of diamond and graphite were examined. Based on comparisons with reported results, the energy positions of absorption edges-representing the bottom of conduction bands (CB)-were assigned. The self-absorption profiles in the background intensities were consistent with previously reported data.
View Article and Find Full Text PDFElucidation of the Co state with strong charge-transfer effects in charged LiCoO by resonant soft X-ray emission spectroscopy at the Co L edge.
Phys Chem Chem Phys
December 2024
Debye Institute for Nanomaterials Science, Utrecht University, 3584 GG Utrecht, The Netherlands.
To understand the electronic-structure change of LiCoO, a widely used cathode material in Li-ion batteries, during charge-discharge, we performed soft X-ray absorption spectroscopy (XAS) and resonant soft X-ray emission spectroscopy (RXES) of the Co L edge in combination with charge-transfer multiplet calculations. The RXES profile significantly changed for the charged state at 4.2 V Li/Li, corresponding to the oxidation reaction from a Co low-spin state for the initial state, while the XAS profile exhibited small changes.
View Article and Find Full Text PDFReconstruction of soft x-ray emission in MAST Upgrade.
Rev Sci Instrum
December 2024
UKAEA, Culham Centre for Fusion Energy, Culham OX14 3EB, United Kingdom.
Understanding the confinement of fast ions is crucial for plasma heating and non-inductive current drive, i.e., for the operation of a fusion reactor.
View Article and Find Full Text PDFExperimental Demonstration of Mode-Coupled and High-Brightness Self-Amplified Spontaneous Emission in an X-Ray Free-Electron Laser.
Phys Rev Lett
November 2024
Paul Scherrer Institut, CH-5232 Villigen, Switzerland.
X-ray free-electron lasers (FELs) are modern research tools with applications in multiple scientific fields. Standard x-ray FEL pulses are produced by the self-amplified spontaneous emission (SASE) mechanism. SASE-FEL pulses have high power, short duration, and excellent transverse coherence but exhibit poor temporal coherence with power and spectral profiles consisting of multiple randomly distributed spikes.
View Article and Find Full Text PDFThermal Conversion of Ultrathin Nickel Hydroxide for Wide Band Gap 2D Nickel Oxides.
ACS Omega
November 2024
Division of Materials Science and Engineering, Boston University, 15 St. Mary's Street, Boston, Massachusetts 02215, United States.
Wide band gap (WBG) semiconductors ( > 2.0 eV) are integral to the advancement of next-generation electronics, optoelectronics, and power industries owing to their capability for high-temperature operation, high breakdown voltage, and efficient light emission. Enhanced power efficiency and functional performance can be attained through miniaturization, specifically via the integration of device fabrication into a two-dimensional (2D) structure enabled by WBG 2D semiconductors.
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