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Spintronic devices and applications using noncollinear chiral antiferromagnets.
Nanoscale Horiz
December 2024
Electrical and Computer Engineering, The Grainger College of Engineering, University of Illinois Urbana-Champaign, Urbana, USA.
Antiferromagnetic materials have several unique properties, such as a vanishingly small net magnetization, which generates weak dipolar fields and makes them robust against perturbation from external magnetic fields and rapid magnetization dynamics, as dictated by the geometric mean of their exchange and anisotropy energies. However, experimental and theoretical techniques to detect and manipulate the antiferromagnetic order in a fully electrical manner must be developed to enable advanced spintronic devices with antiferromagnets as their active spin-dependent elements. Among the various antiferromagnetic materials, conducting antiferromagnets offer high electrical and thermal conductivities and strong electron-spin-phonon interactions.
View Article and Find Full Text PDFUnveiling van Hove Singularity-Boosted Photothermoelectric Response for Wearable Human-Radiation Detection.
ACS Sens
December 2024
School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen 518055, China.
Van Hove singularity (vHs), the singularity point of density of states (DOS) in crystalline solids, is a research hotspot in emerging phenomena such as light-matter interaction, superconducting, and quantum anomalous Hall effect. Although the significance of vHs in photothermoelectric (PTE) effect has been recognized, its integral role in electron excitation and thermoelectric effect is still unclear, particularly in the mid-infrared band that suffers from Pauli blockade in semimetals. Here, we unveil the Fermi-level-modulated PTE behavior in the vicinity of vHs in carbon nanotubes, employing ionic-liquid gating.
View Article and Find Full Text PDFModulation of the Nernst Thermoelectrics by Regulating the Anomalous Hall and Nernst Angles.
Adv Sci (Weinh)
January 2025
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
The large anomalous Nernst effect in magnetic Weyl semimetals is one of the most intriguing transport phenomena, which draws significant attention for its potential applications in topological thermoelectrics. Despite frequent reports of substantial anomalous Nernst conductivity (ANC), methods to optimize Nernst thermoelectrics remain limited. The research reveals that the magnitude of the ANC is directly related to the sum of the anomalous Nernst and Hall angles.
View Article and Find Full Text PDFHybridizing anomalous Nernst effect in artificially tilted multilayer based on magnetic topological material.
Nat Commun
November 2024
National Institute for Materials Science, Tsukuba, 305-0047, Japan.
Transverse thermoelectric conversion holds significant potential in addressing complex challenges faced by classical Seebeck/Peltier modules. A promising transverse thermoelectric phenomenon is the anomalous Nernst effect originating from nontrivial band structures in magnetic topological materials. However, the currently reported performance of the anomalous Nernst effect in topological materials, e.
View Article and Find Full Text PDFAnomalous Nernst Effect-Based Near-Field Imaging of Magnetic Nanostructures.
ACS Nano
November 2024
Max Planck Institute of Microstructure Physics, Weinberg 2, Halle 06120, Germany.
Article Synopsis
- The anomalous Nernst effect (ANE) creates an electrical response perpendicular to magnetization and temperature gradients in magnetic metals, allowing for sensitive imaging techniques.
- Using a laser with an atomic force microscope tip generates nanoscale temperature gradients, enabling detailed measurements of magnetic structures and the temperature distribution associated with them.
- The study demonstrates improved ANE imaging capabilities for analyzing out-of-plane magnetization in nanowires, achieving a spatial resolution of about 70 nm, which is crucial for advancements in spintronic devices and thermoelectric imaging.
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