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High-throughput evaluation of half-metallicity of CoMnSi Heusler alloys using composition-spread films and spin-integrated hard X-ray photoelectron spectroscopy.
Sci Technol Adv Mater
January 2025
Magnetic Functional Device Group, Research Center for Magnetic and Spintronic Materials (CMSM), National Institute for Materials Science (NIMS), Tsukuba, Japan.
We demonstrate high-throughput evaluation of the half-metallicity of CoMnSi Heusler alloys by spin-integrated hard X-ray photoelectron spectroscopy (HAXPES) of composition-spread films performed with high-brilliance synchrotron radiation at NanoTerasu, which identifies the optimum composition showing the best half-metallicity. Co Mn Si composition-spread thin films for = 10-40% with a thickness of 30 nm are fabricated on MgO(100) substrates using combinatorial sputtering technique. The 2-ordering and (001)-oriented epitaxial growth of CoMnSi are confirmed by X-ray diffraction for = 18-40%.
View Article and Find Full Text PDFMinimal Models and Transport Properties of Unconventional p-Wave Magnets.
Phys Rev Lett
December 2024
Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway.
New unconventional compensated magnets with a p-wave spin polarization protected by a composite time-reversal translation symmetry have been proposed in the wake of altermagnets. To facilitate the experimental discovery and applications of these unconventional magnets, we construct an effective analytical model. The effective model is based on a minimal tight-binding model for unconventional p-wave magnets that clarifies the relation to other magnets with p-wave spin-polarized bands.
View Article and Find Full Text PDFSpin-Tunneling Magnetoresistive Effects in Bottom-Up-Grown Ni/Graphene/Ni Nanojunctions.
ACS Appl Mater Interfaces
November 2024
College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China.
Two-dimensional (2D) materials embedded in magnetic tunnel junctions (MTJs) provide a platform to increase the control over spin transport properties by the proximity spin-filtering effect. This could be harnessed to craft spintronic devices with low power consumption and high performance. We explore the spin transport in the 2D MTJs based on graphene, which is uniformly grown on Ni(111) substrates using the chemical vapor deposition technique.
View Article and Find Full Text PDFSpin Transport Modulation of 2D FeO Nanosheets Driven by Verwey Phase Transition.
Adv Sci (Weinh)
November 2024
International Iberian Nanotechnology Laboratory (INL), Braga, 4715-330, Portugal.
Article Synopsis
- The study focuses on improving spin transport between heavy metals and 2D magnetic materials for advanced spintronic technology, highlighting the importance of high Curie temperatures.
- Environmentally stable nonlayered FeO nanosheets were synthesized, demonstrating vortex magnetic domains at room temperature and a Verwey phase transition temperature of around 110 K.
- The findings reveal how properties like anisotropic magnetoresistance and spin Hall magnetoresistance vary with temperature, suggesting that 2D FeO nanosheets are promising for high-performance micro spintronic storage applications.
Giant Anisotropic Magnetoresistance in Few-Layer α-RuCl Tunnel Junctions.
ACS Nano
September 2024
Institut quantique and Département de physique, Université de Sherbrooke, Sherbrooke, QC J1K 2R1, Canada.
The spin-orbit-assisted Mott insulator α-RuCl is proximate to the coveted quantum spin liquid (QSL) predicted by the Kitaev model. In the search for the pure Kitaev QSL, reducing the dimensionality of this frustrated magnet by exfoliation has been proposed as a way to enhance magnetic fluctuations and Kitaev interactions. Here, we perform angle-dependent tunneling magnetoresistance (TMR) measurements on ultrathin α-RuCl crystals with various layer numbers to probe their magnetic, electronic, and crystal structures.
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