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http://dx.doi.org/10.1103/physrevb.53.3627 | DOI Listing |
Nanomicro Lett
January 2022
Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.
Although bismuth vanadate (BiVO) has been promising as photoanode material for photoelectrochemical water splitting, its charge recombination issue by short charge diffusion length has led to various studies about heterostructure photoanodes. As a hole blocking layer of BiVO, titanium dioxide (TiO) has been considered unsuitable because of its relatively positive valence band edge and low electrical conductivity. Herein, a crystal facet engineering of TiO nanostructures is proposed to control band structures for the hole blocking layer of BiVO nanodots.
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