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Oxygen Incorporation as a Route to Nondegenerate Zinc Nitride Semiconductor Thin Films.
ACS Appl Mater Interfaces
January 2025
Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.
Zinc nitride (ZnN) comprises earth-abundant elements, possesses a small direct bandgap, and is characterized by high electron mobility. While these characteristics make the material a promising compound semiconductor for various optoelectronic applications, including photovoltaics and thin-film transistors, it commonly exhibits unintentional degenerate n-type conductivity. This degenerate character has significantly impeded the development of ZnN for technological applications and is commonly assumed to arise from incorporation of oxygen impurities.
View Article and Find Full Text PDFConstructing n/n Type Perovskite Homojunctions to Achieve High-Efficiency and Stable Printable Mesoscopic Perovskite Solar Cells.
Small
January 2025
Engineering Research Center of Electronic Information Materials and Devices (Ministry of Education), Guangxi Key Laboratory of Information Materials, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, China.
In recent years, carbon-based printable mesoscopic perovskite solar cells (p-MPSCs) without hole transport layers have garnered considerable interest because of their outstanding benefits in terms of stability and cost. However, the use of carbon electrodes instead of hole transport materials and noble metal electrodes leads to energy level mismatch, which limits the power conversion efficiency (PCE) of p-MPSCs. In this work, a molecular doping strategy is proposed employing cyclopentylmethanamine to passivate surface and subsurface crystal defects in perovskite layers while inducing an energy shift toward the p-type in the perovskite region within carbon electrodes.
View Article and Find Full Text PDFDimensional Regulation of Organic n-Type Dopants for Highly Efficient Perovskite Solar Cells and Modules.
Adv Mater
January 2025
College of Chemistry, Nanchang University, Nanchang, 330031, China.
A strong n-type perovskite layer is crucial in achieving high open-circuit voltage (V) and power conversion efficiency (PCE) in the p-i-n solar cells, as the weak n-type perovskites result in a loss of V, and the p-type perovskites contain numerous electron traps that cause the severe carrier recombination. Here, three types of perylene diimide (PDI) based small molecule dopants with different dimensions, including 1D-PDI, 2D-PDI, and 3D-PDI are designed, to produce heavier n-type perovskites. The PDI-based molecules with Selenium atoms have a strong electron-donating ability, effectively enlarging the quasi-Fermi level splitting within the perovskites.
View Article and Find Full Text PDFEffects of Homogeneous Doping on Electron-Phonon Coupling in SrTiO.
Nanomaterials (Basel)
January 2025
Department of Physics and Natural Science Research Institute, University of Seoul, Seoul 02504, Republic of Korea.
Bulk n-type SrTiO (STO) has long been known to possess a superconducting ground state at an exceptionally dilute carrier density. This has raised questions about the applicability of the BCS-Eliashberg paradigm with its underlying adiabatic assumption. However, recent experimental reports have set the pairing gap to the critical temperature (Tc) ratio at the BCS value for superconductivity in Nb-doped STO, even though the adiabaticity condition the BCS pairing requires is satisfied over the entire superconducting dome only by the lowest branch of optical phonons.
View Article and Find Full Text PDFStructural Modifications for Tuning Performance and Operational Modes in n-Type Organic Electrochemical Transistors.
ACS Appl Mater Interfaces
January 2025
School of Microelectronics, Shanghai University, Shanghai 201800, China.
Organic mixed ionic-electronic conductors (OMIECs) are crucial in defining the operational modes and performance of organic electrochemical transistors (OECTs). However, studies on the design and structure-performance correlations of small-molecule n-type OMIECs remain scarce. Herein, we designed and synthesized a series of naphthalene diimide (NDI)-based n-type small molecules by extending π-conjugation and increasing the number of electron-withdrawing groups, achieving performance optimization and even changes in operational modes through structural regulations.
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