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Anisotropic exchange interaction of two hole-spin qubits.
Nat Phys
May 2024
Department of Physics, University of Basel, Basel, Switzerland.
Semiconductor spin qubits offer the potential to employ industrial transistor technology to produce large-scale quantum computers. Silicon hole spin qubits benefit from fast all-electrical qubit control and sweet spots to counteract charge and nuclear spin noise. However, the demonstration of a two-qubit interaction has remained an open challenge.
View Article and Find Full Text PDFFilling the gaps: Introducing plasticizers into π-conjugated OPE-NH Langmuir layers for defect-free anisotropic interfaces and membranes towards unidirectional mass, charge, or energy transfer.
J Colloid Interface Sci
February 2025
Leibniz Institute of Photonic Technology (IPHT), Albert-Einstein-Str. 9, 07745 Jena, Germany; Sciclus GmbH & Co. KG, Moritz-von-Rohr-Str. 1a, 07745 Jena, Germany; Center for Energy and Environmental Chemistry Jena (CEEC Jena), Friedrich Schiller University Jena, Philosophenweg 7a, 07743 Jena, Germany. Electronic address:
The construction of ultrathin membranes from linearly aligned π-electron systems is advantageous for targeted energy, charge, or mass transfer. The Langmuir-Blodgett (LB) technique enables the creation of such membranes, especially with amphiphilic π-electron systems. However, these systems often aggregate, forming rigid Langmuir monolayers with defects or holes.
View Article and Find Full Text PDFPredicting the characteristics of a CB monolayer with ultrahigh carrier mobility.
Front Chem
October 2024
School of Automation and Information Engineering, Xi'an University of Technology, Xi'an, China.
Two-dimensional materials have excellent electronic and optical properties, suggesting absolute advantages in nanodevices. In this work, a new two-dimensional material with a puckered structure, a CB monolayer, is proposed. The material presents dynamic and thermal stability calculated by first-principle simulations.
View Article and Find Full Text PDFVisualizing Ultrafast Photogenerated Electron and Hole Separation in Facet-Engineered Bismuth Vanadate Crystals.
J Am Chem Soc
November 2024
State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China.
Photogenerated charge separation is pivotal for effecting efficient photocatalytic reactions. Understanding this process with spatiotemporal resolution is vital for devising highly efficient photocatalysts. Here, we employed pump-probe transient reflection microscopy to directly observe the temporal and spatial evolution of photogenerated electrons and holes on the surface of facet-engineered bismuth vanadate (BiVO) crystals.
View Article and Find Full Text PDFDirectional Characteristic Enhancement of an Omnidirectional Detection Sensor Enabled by Strain Partitioning Effects in a Periodic Composite Hole Substrate.
ACS Sens
November 2024
College of Electronic and Information Engineering, Shandong University of Science and Technology, Qingdao 266590, China.
An omnidirectional stretchable strain sensor with high resolution is a critical component for motion detection and human-machine interaction. It is the current dominant solution to integrate several consistent units into the omnidirectional sensor based on a certain geometric structure. However, the excessive similarity in orientation characteristics among sensing units restricts orientation recognition due to their closely matched strain sensitivity.
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