Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1103/physrevb.53.r7599 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Optimization of In-Situ Growth of Superconducting Al/InAs Hybrid Systems on GaAs for the Development of Quantum Electronic Circuits.
Materials (Basel)
January 2025
CNR-IOM-Istituto Officina dei Materiali, Consiglio Nazionale delle Ricerche, 34149 Trieste, Italy.
Hybrid systems consisting of highly transparent channels of low-dimensional semiconductors between superconducting elements allow the formation of quantum electronic circuits. Therefore, they are among the novel material platforms that could pave the way for scalable quantum computation. To this aim, InAs two-dimensional electron gases are among the ideal semiconductor systems due to their vanishing Schottky barrier; however, their exploitation is limited by the unavailability of commercial lattice-matched substrates.
View Article and Find Full Text PDFBuffer-Less Gallium Nitride High Electron Mobility Heterostructures on Silicon.
Adv Mater
January 2025
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK.
Thick metamorphic buffers are considered indispensable for III-V semiconductor heteroepitaxy on large lattice and thermal-expansion mismatched silicon substrates. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistors (HEMT) impose a substantial thermal resistance, deteriorating device efficiency and lifetime by throttling heat extraction. To circumvent this, a systematic methodology for the direct growth of GaN after the AlN nucleation layer on six-inch silicon substrates is demonstrated using metal-organic vapor phase epitaxy (MOVPE).
View Article and Find Full Text PDFObservation of quantum oscillations near the Mott-Ioffe-Regel limit in CaAs.
Natl Sci Rev
December 2024
State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China.
The Mott-Ioffe-Regel limit sets the lower bound of the carrier mean free path for coherent quasiparticle transport. Metallicity beyond this limit is of great interest because it is often closely related to quantum criticality and unconventional superconductivity. Progress along this direction mainly focuses on the strange-metal behaviors originating from the evolution of the quasiparticle scattering rate, such as linear-in-temperature resistivity, while the quasiparticle coherence phenomena in this regime are much less explored due to the short mean free path at the diffusive bound.
View Article and Find Full Text PDFUnveiling the phases of bulk ZrTethrough magnetotransport phenomena.
Nanotechnology
December 2024
Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan.
Article Synopsis
- The study introduces a simple method to determine the topological phase of the complex quantum material ZrTe without directly examining its band structure.
- Through low-temperature electrical and magnetotransport measurements, researchers observed weak antilocalization effects and Shubnikov-de Haas oscillations, indicating the presence of multiple conducting channels.
- The findings suggest that bulk ZrTe crystals exhibit distinct transport properties, making them an exciting area for future research on quantum phases and transitions in three-dimensional quantum systems.
Unveiling the Nontrivial Electronic Structures and Fermi Topology of High-Temperature Kagome Ferrimagnet HoMnSn.
Nano Lett
December 2024
Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, Center for Neutron Science and Technology, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
Article Synopsis
- - High-temperature kagome magnets, like HoMnSn, are valuable for studying topological physics and have potential uses in spintronics due to their unique electron and magnetic interactions.
- - Researchers used quantum oscillation measurements and density functional theory to analyze HoMnSn, revealing high quantum mobility and complex electronic structures with both hole and electron pockets.
- - The findings indicate the presence of nontrivial topological properties in HoMnSn, suggesting its suitability for advanced applications in topological magnetoelectronics and spin-based technologies.
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!