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Augmented Extraction Efficiency of a Hot D Exciton in MoS via Intervalley Scattering.
Nano Lett
September 2024
Department of Physics, Pusan National University, Busan 46241, Republic of Korea.
Prolonging hot carrier cooling, a crucial factor in optoelectronic applications, including hot carrier photovoltaics, presents a significant challenge. High-energy band-nesting excitons within parallel bands offer a promising and underexplored avenue for addressing this issue. Here, we exploit an exceptional D exciton cooling prolongation of 2 to 3 orders of magnitude compared to sub-picosecond in typical transition metal dichalcogenides (TMDs) owing to the complex Coulomb environment and the sequential and mismatch-valley relaxation.
View Article and Find Full Text PDFNonadiabatic Molecular Dynamics in Momentum Space Beyond Harmonic Approximation: Hot Electron Relaxation in Photoexcited Black Phosphorus.
J Am Chem Soc
July 2024
College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, People's Republic of China.
We simulated hot-electron relaxation in black phosphorus using the nonadiabatic molecular dynamics (NA-MD) approach with a non-Condon effect in momentum space beyond the harmonic approximation. By comparing simulations at the Γ point in a large supercell with those using a few -points in a smaller supercell─while maintaining the same number of electronic states within the same energy range, we demonstrate that both setups yield remarkably consistent energy relaxation times, regardless of the initial state energy. This consistency arises from the complementary effects of supercell size in real space and the number of -points in the reciprocal space.
View Article and Find Full Text PDFInsights into electronic properties of strained two-dimensional semiconductors by out-of-plane bending.
J Phys Condens Matter
April 2023
School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China.
Strain engineering is an important strategy to modulate the electronic and optical properties of two-dimensional (2D) semiconductors. In experiments, an effective and feasible method to induce strains on 2D semiconductors is the out-of-plane bending. However, in contrast to the in-plane methods, it will generate a combined strain effect on 2D semiconductors, which deserves further explorations.
View Article and Find Full Text PDFPhonon-Assisted Intervalley Scattering Determines Ultrafast Exciton Dynamics in MoSe_{2} Bilayers.
Phys Rev Lett
October 2021
Department of Physics and Center for Complex Quantum Systems, The University of Texas at Austin, Austin, Texas 78712, USA.
While valleys (energy extrema) are present in all band structures of solids, their preeminent role in determining exciton resonances and dynamics in atomically thin transition metal dichalcogenides (TMDC) is unique. Using two-dimensional coherent electronic spectroscopy, we find that exciton decoherence occurs on a much faster timescale in MoSe_{2} bilayers than that in the monolayers. We further identify two population relaxation channels in the bilayer, a coherent and an incoherent one.
View Article and Find Full Text PDFIntervalley scattering in GaAs(111)-supported silicene.
Phys Chem Chem Phys
November 2020
Department of Physics, School of Science, Beijing Jiaotong University, Beijing, 100044, People's Republic of China.
In this paper, we investigated the valley transport properties of silicene on a GaAs(111) substrate. Hydrogen atoms as intercalation substantially weaken the interaction between silicene and GaAs(111) substrate. Thus, the equivalent intervalley scattering between K valleys and the non-equivalent intervalley scattering between Γ and K valleys were studied.
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