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Surface plasmon resonance (SPR) is attractive for applications in solar cells, photodetectors, and lasers due to its properties of localized electric field enhancement, subwavelength confinement, and overcoming the diffraction limit. GaAs-based heterostructures are well-known for their high electron mobility and excellent light absorption properties, making them widely used in optoelectronic devices. However, they are generally limited to wavelengths below 1.
View Article and Find Full Text PDFAu-Capped GaAs Nanopillar Arrays Fabricated by Metal-Assisted Chemical Etching.
Nanoscale Res Lett
December 2017
Department of Applied Chemistry, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo, 192-0015, Japan.
GaAs nanopillar arrays were successfully fabricated by metal-assisted chemical etching using Au nanodot arrays. The nanodot arrays were formed on substrates by vacuum deposition through a porous alumina mask with an ordered array of openings. By using an etchant with a high acid concentration and low oxidant concentration at a relatively low temperature, the area surrounding the Au/GaAs interface could be etched selectively.
View Article and Find Full Text PDF[Study of electroreflectance spectrum and Franz-Keldysh effect at metal-GaAs interfaces].
Guang Pu Xue Yu Guang Pu Fen Xi
August 2008
TEDA Applied Physics School, Nankai University, Tianjin 300457, China.
Electronic properties (electric field, Fermi level pinning and density of interface states) of Au-GaAs, Al-GaAs and Ni-GaAs interfaces were studied by optical methods. These interfaces were fabricated by depositing metals (Ni, Au and Al) on specialized surface-intrinsic-n+ (SIN+) GaAs samples. Electroreflectance (ER) was used to study the electric fields and Fermi level pinnings of metal-GaAs interfaces.
View Article and Find Full Text PDFBallistic electron emission microscopy studies of Au/molecule/n-GaAs diodes.
J Phys Chem B
April 2005
Department of Physics, Simon Fraser University, Burnaby, BC, V5A 1S6, Canada.
We present nanometer-scale resolution, ballistic electron emission microscopy (BEEM) studies of Au/octanedithiol/n-GaAs (001) diodes. The presence of the molecule dramatically increases the BEEM threshold voltage and displays an unusual transport signature as compared to reference Au/GaAs diodes. Furthermore, BEEM images indicate laterally inhomogeneous interfacial structure.
View Article and Find Full Text PDFOrigin of Schottky barriers in gold contacts on GaAs110.
Phys Rev Lett
November 2004
IV. Physikalisches Institut der Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany.
Gold contacts on n-type GaAs(110) have been investigated using scanning tunneling microscopy and spectroscopy in cross-sectional configuration. In spatially resolved current voltage spectroscopy the Schottky barrier potential is visible. We find signatures of delocalized gap states at the interface decaying into the semiconductor and observe a defect density at the interface below 3 x 10(13) cm(-2).
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