Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions.

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Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions.

H Bracht NA Stolwijk H Mehrer

Phys Rev B Condens Matter

Published: December 1995

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http://dx.doi.org/10.1103/physrevb.52.16542	DOI Listing

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http://dx.doi.org/10.1103/physrevb.52.16542

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Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions.

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