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Design of an Atomic Layer-Deposited InO/GaO Channel Structure for High-Performance Thin-Film Transistors.
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Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea.
For potential application in advanced memory devices such as dynamic random-access memory (DRAM) or NAND flash, nanolaminated indium oxide (In-O) and gallium oxide (Ga-O) films with five different vertical cation distributions were grown and investigated by using a plasma-enhanced atomic layer deposition (PEALD) process. Specifically, this study provides an in-depth examination of how the control of individual layer thicknesses in the nanolaminated (NL) IGO structure impacts not only the physical and chemical properties of the thin film but also the overall device performance. To eliminate the influence of the cation composition ratio and overall thickness on the IGO thin film, these parameters were held constant across all conditions.
View Article and Find Full Text PDFPromising mechanical, electronic and piezoelectric properties of grapheneplus-like BCN monolayer: insights from first-principles.
Phys Chem Chem Phys
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Department of Physics, Zhejiang Sci-Tech University, Hangzhou, Zhejiang 310018, People's Republic of China.
Two-dimensional (2D) carbon allotropes, together with their binary and ternary counterparts, have attracted substantial research interest due to their peculiar geometries and properties. Among them, grapheneplus, a derivative of penta-graphene, has been proposed to exhibit unusual mechanical and electronic behaviour. In this work, we perform a comprehensive first-principles study on its isoelectronic and isostructural analogue, a grapheneplus-like BCN (gp-BCN) monolayer.
View Article and Find Full Text PDFAdvanced MASnI and PTAA-Integrated ZnO Perovskite Composite: Optimizing Stability and Charge Dynamics for Next-Gen Photobatteries.
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Department of Physics, Riphah International University, Campus Lahore, Lahore 54000, Pakistan.
To advance off-grid energy solutions, developing flexible photobatteries capable of direct light charging is essential. This study presents an innovative photobattery architecture that incorporates zinc oxide (ZnO) as an electron-transporting and hole-blocking layer, combined with a hybrid methylammonium tin iodide composite with poly-triarylamine (MASnI/PTAA) for light absorption and hole transport. PTAA facilitates efficient hole transport to the anode, thereby enhancing charge separation and reducing recombination losses.
View Article and Find Full Text PDFDipole-induced transitions from Schottky to Ohmic contact at Janus MoSiGeN/metal interfaces.
Nanoscale Horiz
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SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China.
Janus MoSiGeN monolayers exhibit exceptional mechanical stability and high electron mobility, which make them a promising channel candidate for field-effect transistors (FETs). However, the high Schottky barrier at the contact interface would limit the carrier injection efficiency and degrade device performance. Herein, using density functional theory calculations and machine learning methods, we investigated the interfacial properties of the Janus MoSiGeN monolayer and metal electrode contacts.
View Article and Find Full Text PDFActive Locating Exciton- and Charge-Initialized Degradation in Quantum-Dot Light-Emitting Diodes.
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January 2025
Central Research Institute, BOE Technology Group Co. Ltd, Beijing, 100176, China.
For quantum-dot light-emitting diodes (QLED), electrical aging commonly introduces collective aging sources across all layers, making it difficult to isolate the impact of each layer on electroluminescence (EL) degradation. In this work, a layer-selective aging method using active photoexcitation is proposed, in which the photoexcitation wavelength is used to selectively target specific layers for exciton generation, and an electrical bias is applied to induce photocurrent and create charges. An iterative aging-sampling (A-S) procedure is used to link aging conditions to EL degradation.
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