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Intervalence plasmons in boron-doped diamond.
Nat Commun
January 2025
Department of Nuclear, Plasma, and Radiological Engineering, The Grainger College of Engineering, University of Illinois Urbana-Champaign, Champaign, IL, USA.
Doped semiconductors can exhibit metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons has never been shown.
View Article and Find Full Text PDFControl of Subband Energies via Interlayer Twisting in an Artificially Stacked WSe Bilayer.
Nano Lett
October 2024
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan.
Tuning the electronic structure of artificially stacked bilayer crystals using their twist angle has attracted a significant amount of interest. In this study, resonant tunneling spectroscopy was performed on trilayer WSe/-BN/twisted bilayer (tBL) WSe devices with a wide range of twist angles (θ) of tBL WSe, from 0° to 34°. We observed two resonant tunneling peaks, identified as the first and second lowest hole subbands at the valence band Γ point of tBL WSe.
View Article and Find Full Text PDFElectroluminescent vertical tunneling junctions based on WSe monolayer quantum emitter arrays: Exploring tunability with electric and magnetic fields.
Proc Natl Acad Sci U S A
June 2024
Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117544, Singapore.
We experimentally demonstrate the creation of defects in monolayer WSe via nanopillar imprinting and helium ion irradiation. Based on the first method, we realize atomically thin vertical tunneling light-emitting diodes based on WSe monolayers hosting quantum emitters at deterministically specified locations. We characterize these emitters by investigating the evolution of their emission spectra in external electric and magnetic fields, as well as by inducing electroluminescence at low temperatures.
View Article and Find Full Text PDFPlasmon-Induced Ultrafast Hot Hole Transfer in Nonstoichiometric CuInS/CdS Heteronanocrystals.
J Phys Chem Lett
May 2024
School of Chemical Sciences, National Institute of Science Education and Research, Bhubaneswar, Odisha 752050, India.
Plasmonic semiconductors are promising candidates for developing energy conversion devices due to their tunable band gap, cost-effectiveness, and nontoxicity. Such materials exhibit remarkable capabilities for harvesting infrared photons, which constitute half of the solar energy spectrum. Herein, we have synthesized near-infrared (NIR) active CuInS nanocrystals and CuInS/CdS heterostructure nanocrystals (HNCs) to investigate plasmon-induced charge transfer dynamics on an ultrafast time scale.
View Article and Find Full Text PDFSub-Band Assisted Z-Scheme for Effective Non-Sacrificial HO Photosynthesis.
Small
August 2024
Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, SAR, 999077, P. R. China.
Photosynthesis of HO from earth-abundant O and HO molecules offers an eco-friendly route for solar-to-chemical conversion. The persistent challenge is to tune the photo-/thermo- dynamics of a photocatalyst toward efficient electron-hole separation while maintaining an effective driving force for charge transfer. Such a case is achieved here by way of a synergetic strategy of sub-band-assisted Z-Scheme for effective HO photosynthesis via direct O reduction and HO oxidation without a sacrificial agent.
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